Efficient Power Scaling of Broad-Area Laser Diodes from 915 to 1064 nm | |
Yang, Guowen1,2,3![]() | |
2024 | |
会议名称 | High-Power Diode Laser Technology XXII 2024 |
会议录名称 | High-Power Diode Laser Technology XXII |
卷号 | 12867 |
会议日期 | 2024-01-28 |
会议地点 | San Francisco, CA, United states |
出版者 | SPIE |
产权排序 | 1 |
摘要 | Our primary goal is to significantly enhance the output power of broad-area laser diodes (LDs) for improved cost-effectiveness of laser systems and broaden their applications in various fields. To achieve this, we implemented an epitaxial design with low internal optical loss and high internal efficiency in agreement with our simulations. We present comprehensive results of high-power single-emitter and bar LDs spanning wavelengths from 915 to 1064 nm. To demonstrate power scaling in single emitter LDs, we utilized waveguide widths from 100 to 500 µm, achieving a continuous-wave (CW) maximum output power of 74 W at 976 nm under room temperature conditions, limited by the heatsink temperature control. We also build fiber-coupled modules with single-emitters operating at 1.6 kW. Employing the same epitaxial structure in 1-cm wide laser bars, we demonstrated 976 nm laser bars operated at 100 A CW with 113 W output and a high efficiency of 72.9% at room temperature. Additionally, we achieved 500 W room-temperature CW laser bars at 940 nm. For long wavelength designs at 1064 nm, 500 W output was obtained in quasi-continuous-wave (QCW) operating laser bars. Our results represent significant advancements in obtaining high power and efficient LDs across a broad wavelength range and configuration. © 2024 SPIE. |
关键词 | Semiconductor laser laser diode high power high efficiency |
作者部门 | 瞬态光学研究室 |
DOI | 10.1117/12.3002642 |
收录类别 | EI ; CPCI |
ISBN号 | 9781510669932 |
语种 | 英语 |
ISSN号 | 0277786X;1996756X |
WOS记录号 | WOS:001211794800030 |
EI入藏号 | 20241615941127 |
引用统计 | |
文献类型 | 会议论文 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/97423 |
专题 | 瞬态光学研究室 |
作者单位 | 1.Dogain Optoelectronic Technology (Suzhou) Co., Ltd., Suzhou; 215000, China; 2.State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an; 710119, China; 3.University of Chinese Academy of Sciences, Beijing; 100049, China; 4.Bilkent University, UNAM - Institute of Materials Science and Nanotechnology, Ankara; 06800, Turkey |
推荐引用方式 GB/T 7714 | Yang, Guowen,Liu, Yuxian,Zhao, Yuliang,et al. Efficient Power Scaling of Broad-Area Laser Diodes from 915 to 1064 nm[C]:SPIE,2024. |
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文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Efficient Power Scal(539KB) | 会议论文 | 限制开放 | CC BY-NC-SA | 请求全文 |
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