瞬态光学研究室知识库

Semiconductor laser diodes (LDs) generate high output powers with high power conversion efficiencies. While broad-area LDs are favored for high-power applications, narrow-waveguide LDs are in demand for their single-mode characteristics. However, LDs suffer from device failures caused by catastrophic optical damage (COD) due to elevated self-heating at high operating currents. It is critical to understand the COD mechanism in these devices to enhance their reliability and operating output power. In this study, we investigated the self-heating and temperature characteristics of LDs with varying waveguide widths to uncover the cause of their failure mechanism. We assessed the performance, junction, and facet temperatures of the narrow (W=7 µm) and broad waveguide (W=100 µm) LDs. The narrower waveguide LDs achieved and operated at higher output power densities but, surprisingly, maintained lower junction and facet temperatures. Additionally, we employed a thermal simulation model to analyze heat transport characteristics versus LD waveguide widths. The simulation results showed that narrower waveguide LDs exhibit improved three-dimensional heat dissipation, resulting in reduced junction and facet temperatures and, thus, enhanced reliability. Our simulations align well with the experimental data. The findings demonstrate a transition in heat dissipation characteristics from broad to narrow waveguide behavior at approximately 50 µm width. These results clarify the fundamental reasons behind the superior reliability of narrower waveguide LDs and provide valuable guidance for LD thermal management. © 2024 SPIE.