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Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes
Wu, Shun-Hua1,2; Li, Te2; Wang, Dan2; Yu, Xue-Cheng2; Wang, Zhen-Fu2; Liu, Guo-Jun1
2021
会议名称16th National Conference on Laser Technology and Optoelectronics
会议录名称Sixteenth National Conference on Laser Technology and Optoelectronics
卷号11907
会议日期2021-06-03
会议地点Shanghai, China
出版者SPIE
产权排序1
摘要Aiming at the epitaxial structure of the high-power 885nm laser diodes, the factors limiting the further increase of the output power and the power conversion efficiency were investigated. According to the analysis, the epitaxial structure of the laser diodes was optimized, and the influence of the waveguide layer thickness on the carrier absorption loss and the series resistance was theoretically simulated. The results showed that the asymmetric waveguide structure with the thickness ratio of the N-side and the P-side of 6:4 can reduce the carrier absorption loss to the greatest extent. Based on the simulation results, the 885nm laser bars with the optimized epitaxial structure were fabricated and tested under the ambient temperature of 25 in a quasi-continuous wave mode of 250μs and 200Hz. The slope efficiency reaches 1.26W/A, while the series resistance is only 1.2mω. The power of 277.6W is achieved at 250A injection current and the maximum power conversion efficiency exceeds 64%. © 2021 SPIE.
关键词885nm low loss asymmetric waveguide high power high power conversion efficiency
作者部门瞬态光学研究室
DOI10.1117/12.2602879
收录类别EI
ISBN号9781510646636
语种英语
ISSN号0277786X;1996756X
EI入藏号20215111372727
引用统计
文献类型会议论文
条目标识符http://ir.opt.ac.cn/handle/181661/95611
专题瞬态光学研究室
作者单位1.State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Jilin, Changchun; 130022, China;
2.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Shannxi, Xi'an; 710119, China
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Wu, Shun-Hua,Li, Te,Wang, Dan,et al. Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes[C]:SPIE,2021.
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