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Monolithic RGB Micro-Light-Emitting Diodes Fabricated with Quantum Dots Embedded inside Nanoporous GaN
Song, Jie1; Kang, Jin-Ho2; Han, Jung2
作者部门瞬态光学研究室
2021-11-23
发表期刊ACS Applied Electronic Materials
ISSN26376113
卷号3期号:11页码:4877-4881
产权排序1
摘要

We report the use of colloidal quantum dots (QDs) embedded in nanoporous (NP) gallium nitride (GaN) as a color converter to achieve different emission colors and fabricate micro-light-emitting diodes (micro-LEDs). The optical property of NP-GaN has been studied by analyzing the light transmittance propagating in NP-GaN. A strong light scattering effect can be induced by NP-GaN, resulting in a dramatically increased optical transmission path for blue light and high light absorption by QDs loaded inside NP-GaN. A 4 in. color converter has been achieved with a wavelength deviation of 1 nm across the entire wafer. Monolithic red, green, and blue micro-LEDs have been fabricated with a pixel size of around 35 × 35 μm2. © 2021 American Chemical Society.

关键词micro-LEDs GaN quantum dots nanoporous electroluminescence
DOI10.1021/acsaelm.1c00700
收录类别SCI ; EI
语种英语
WOS记录号WOS:000756989100023
出版者American Chemical Society
EI入藏号20214611148360
引用统计
被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/95371
专题瞬态光学研究室
通讯作者Song, Jie
作者单位1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an; 710119, China;
2.Department of Electrical Engineering, Yale University, New Haven; CT; 06520, United States
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Song, Jie,Kang, Jin-Ho,Han, Jung. Monolithic RGB Micro-Light-Emitting Diodes Fabricated with Quantum Dots Embedded inside Nanoporous GaN[J]. ACS Applied Electronic Materials,2021,3(11):4877-4881.
APA Song, Jie,Kang, Jin-Ho,&Han, Jung.(2021).Monolithic RGB Micro-Light-Emitting Diodes Fabricated with Quantum Dots Embedded inside Nanoporous GaN.ACS Applied Electronic Materials,3(11),4877-4881.
MLA Song, Jie,et al."Monolithic RGB Micro-Light-Emitting Diodes Fabricated with Quantum Dots Embedded inside Nanoporous GaN".ACS Applied Electronic Materials 3.11(2021):4877-4881.
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