Xi'an Institute of Optics and Precision Mechanics,CAS
| A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier | |
Fang, Yuman1,2; Gou, Yongsheng1 ; Zhang, Minrui1; Wang, Junfeng1; Tian, Jinshou1,3
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| 作者部门 | 条纹相机工程中心 |
| 2021-01-21 | |
| 发表期刊 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
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| ISSN | 0168-9002;1872-9576 |
| 卷号 | 987 |
| 产权排序 | 1 |
| 摘要 | Gate modules based on avalanche technology for photocathode gating to proximity-focused microchannel-plate image intensifier (MCPII) are often limited to short gate exposures. A nanosecond pulse module based on MOSFET devices has been demonstrated at our lab, which is capable of generating pulses of adjustable full width at half maximum (FWHM) from 3 ns to D.C. operation with 1 ns switching time and a burst repetition rate up to 4 MHz. A method of supplying gate-current pulses to the MOSFET device is adopted to increase the switching speed based on the totem pole driver. Nanosecond optical gating time of an 18-mm proximity-focused MCPII with a metallic underlay photocathode was obtained. A MCPII with standard multi-alkali photocathode was analyzed for comparison. Moreover, a photocathode-MCP model based on the Finite Integral Technique (FIT) is developed to investigate the dependence of the gating time on the sheet resistance of the photocathode. |
| 关键词 | Image intensifier ICCD camera MOSFET switching Ultrafast imaging Nanosecond pulse generation |
| DOI | 10.1016/j.nima.2020.164799 |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000597318400010 |
| 出版者 | ELSEVIER |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/94249 |
| 专题 | 条纹相机工程中心 |
| 通讯作者 | Tian, Jinshou |
| 作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech XIOPM, Key Lab Ultrafast Photoelect Diagnost Technol, 17 Xinxi Rd,New Ind Pk, Xian 710119, Shanxi, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fang, Yuman,Gou, Yongsheng,Zhang, Minrui,et al. A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2021,987. |
| APA | Fang, Yuman,Gou, Yongsheng,Zhang, Minrui,Wang, Junfeng,&Tian, Jinshou.(2021).A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,987. |
| MLA | Fang, Yuman,et al."A MOSFET-based high voltage nanosecond pulse module for the gating of proximity-focused microchannel plate image-intensifier".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 987(2021). |
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| A MOSFET-based high （3034KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | 浏览 请求全文 | |
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