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Suppression of substrate mode in GaN-based green laser diodes
Jiang, Lingrong1,2,3; Liu, Jianping1,2,3; Zhang, Liqun1,3; Qiu, Bocang4; Tian, Aiqin1,3; Hu, Lei1,2,3; Li, Deyao1,3; Huang, Siyi1,3; Zhou, Wei1,3; Ikeda, Masao1,3; Yang, Hui1,2,3
作者部门瞬态光学研究室
2020-05-11
发表期刊Optics Express
ISSN10944087
卷号28期号:10页码:15497-15504
产权排序4
摘要

Parasitic substrate mode readily appears in GaN-based laser diodes (LDs) because of insufficient optical confinement, especially for green LDs. Substrate modes affect the behavior of a LD severely, including the laser beam quality, the optical output power, the longitudinal mode stability, and the maximum modulation speed. In this article, systematic studies on the n-cladding layer (CL) design to suppress the substrate mode of GaN-based green LDs were carried out. We established a contour map to describe the relationship between the optical confinement (determined by the thickness and the refractive index) of n-CL and the substrate mode intensity by simulating the near-field pattern and the far-field pattern. We found that it was difficult to obtain the Gaussian-shape far-field pattern using AlGaN as a cladding layer due to the appearance of cracks induced by tensile strain. However, this can be realized by introducing quaternary AlInGaN as a cladding layer since refractive index and strain can be tuned separately for quaternary alloy. © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

DOI10.1364/OE.389880
收录类别SCI ; EI
语种英语
WOS记录号WOS:000538870000116
出版者OSA - The Optical Society
EI入藏号20202008647539
引用统计
被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/93443
专题瞬态光学研究室
通讯作者Liu, Jianping
作者单位1.Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China;
2.School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei; 230026, China;
3.Key Laboratory of Nanodevices and Applications, Chinese of Academy of Sciences, Suzhou; 215123, China;
4.Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an; 710000, China
推荐引用方式
GB/T 7714
Jiang, Lingrong,Liu, Jianping,Zhang, Liqun,et al. Suppression of substrate mode in GaN-based green laser diodes[J]. Optics Express,2020,28(10):15497-15504.
APA Jiang, Lingrong.,Liu, Jianping.,Zhang, Liqun.,Qiu, Bocang.,Tian, Aiqin.,...&Yang, Hui.(2020).Suppression of substrate mode in GaN-based green laser diodes.Optics Express,28(10),15497-15504.
MLA Jiang, Lingrong,et al."Suppression of substrate mode in GaN-based green laser diodes".Optics Express 28.10(2020):15497-15504.
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