Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device

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	Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device
其他题名	Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device
	KWON, O. KYUN; PARK, MI RAN; HAN, WON SEOK; SONG, HYUN WOO
	2007-06-14
专利权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
公开日期	2007-06-14
授权国家	美国
专利类型	发明申请
摘要	Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.
其他摘要	提供用于III-V族的半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl2，Ar，CH4和H2组成的混合物的等离子体，以蚀刻堆叠结构，从而形成镜面层。 VCSEL成立。第一半导体层由III-V族的半导体形成，第二半导体层由III-V族的半导体形成，而不是第一半导体层的半导体。使用一次蚀刻工艺蚀刻下镜层，下电极层，光学增益层，上电极层和上镜层的至少一部分，从而获得清洁和光滑的蚀刻表面。
申请日期	2006-12-07
专利号	US20070134926A1
专利状态	失效
申请号	US11/635223
公开（公告）号	US20070134926A1
IPC 分类号	H01L21/302
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/91765
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	KWON, O. KYUN,PARK, MI RAN,HAN, WON SEOK,et al. Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device. US20070134926A1[P]. 2007-06-14.