Processes for Making Reliable VCSEL Devices and VCSEL arrays

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	Processes for Making Reliable VCSEL Devices and VCSEL arrays
其他题名	Processes for Making Reliable VCSEL Devices and VCSEL arrays
	WANG, QING; SEURIN, JEAN-FRANCOIS; GHOSH, CHUNI L.; WATKINS, LAURENCE S.
	2015-09-10
专利权人	PRINCETON OPTRONICS INC.
公开日期	2015-09-10
授权国家	美国
专利类型	发明申请
摘要	A set of VCSEL fabrication methods has been invented which enhance the performance and long time reliability of VCSEL devices and arrays of devices. Wafer bow caused by growing a large number of epitaxial layers required to fabricate VCSEL device generates strain and results in bowing/warping of the device wafer. The stress so generated is eliminated by applying a stress compensation layer on the substrate to a surface opposite to the epitaxial layer surface. New oxidation equipment designs and process parameters are described which produce more precision apertures and reduce stress in the VCSEL device. An ultrathin fabrication procedure is described which enables high power VCSELs to be made for high power operation at many different wavelengths. A low temperature electrical contacting process improves VCSEL long term reliability.
其他摘要	已经发明了一组VCSEL制造方法，其增强了VCSEL器件和器件阵列的性能和长时间可靠性。通过生长制造VCSEL器件所需的大量外延层而引起的晶片弯曲产生应变并导致器件晶片的弯曲/翘曲。通过在衬底上施加应力补偿层到与外延层表面相对的表面来消除如此产生的应力。描述了新的氧化设备设计和工艺参数，其产生更精确的孔径并减小VCSEL器件中的应力。描述了一种超薄制造工艺，其能够制造高功率VCSEL，用于在许多不同波长下的高功率操作。低温电接触工艺提高了VCSEL的长期可靠性。
申请日期	2015-03-02
专利号	US20150255955A1
专利状态	授权
申请号	US14/634902
公开（公告）号	US20150255955A1
IPC 分类号	H01S5/183 \| H01S5/42 \| H01S5/042
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/91632
专题	半导体激光器专利数据库
作者单位	PRINCETON OPTRONICS INC.
推荐引用方式 GB/T 7714	WANG, QING,SEURIN, JEAN-FRANCOIS,GHOSH, CHUNI L.,et al. Processes for Making Reliable VCSEL Devices and VCSEL arrays. US20150255955A1[P]. 2015-09-10.