Monitoring of VCSEL output power with photodiodes

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	Monitoring of VCSEL output power with photodiodes
其他题名	Monitoring of VCSEL output power with photodiodes
	MORETTI, ANTHONY L.
	2004-09-02
专利权人	MOLEX INCORPORATED
公开日期	2004-09-02
授权国家	美国
专利类型	发明申请
摘要	Improved power output sensing of radiation from a plurality of transmitting vertical cavity surface emitting lasers (VCSELs) arranged in a array and attached to a submount. At least one, and preferably two power monitoring VCSELs are also formed on the submount at a location where indirect radiation is not detected from the transmitting VCSELs in the array. Power monitoring VCSELs are formed on flip-chips, preferably on the same wafer as the VCSEL array to provide similar electrical characteristics. The flip-chip VCSELs are mounted to the submount such that the power monitoring VCSELs are generally in alignment with the photodiodes. The photodiodes then produce electrical signals due to radiation emitted by the power monitoring VCSELs, which in turn emulates the amount of radiation emitted by the transmitting VCSELs in the array. Related methods of forming a VCSEL array attached to a submount, with power monitoring of flip-chip VCSELs by photodiodes formed in the submount, is also disclosed.
其他摘要	改进的功率输出感测来自多个发射垂直腔表面发射激光器（VCSEL）的辐射，所述多个发射垂直腔表面发射激光器以阵列布置并附接到基座。至少一个，优选两个功率监测VCSEL也形成在基座上，在没有从阵列中的发射VCSEL检测到间接辐射的位置处。功率监测VCSEL形成在倒装芯片上，优选地在与VCSEL阵列相同的晶片上，以提供类似的电特性。倒装芯片VCSEL安装在基座上，使得功率监测VCSEL通常与光电二极管对准。然后光电二极管由于功率监视VCSEL发射的辐射而产生电信号，VCSEL又模拟阵列中发射VCSEL发射的辐射量。还公开了形成附接到子安装座的VCSEL阵列的相关方法，其中通过形成在子安装座中的光电二极管对倒装芯片VCSEL进行功率监视。
申请日期	2003-02-27
专利号	US20040171180A1
专利状态	失效
申请号	US10/376202
公开（公告）号	US20040171180A1
IPC 分类号	H01L21/00 \| H01S5/02 \| H01S5/022 \| H01S5/026 \| H01S5/0683 \| H01S5/42
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/91258
专题	半导体激光器专利数据库
作者单位	MOLEX INCORPORATED
推荐引用方式 GB/T 7714	MORETTI, ANTHONY L.. Monitoring of VCSEL output power with photodiodes. US20040171180A1[P]. 2004-09-02.