Manufacture of semiconductor wafers

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	Manufacture of semiconductor wafers
其他题名	Manufacture of semiconductor wafers
	KUSUKI TOSHIHIRO; AKITA KENZOU; FURUMIYA SATOSHI; YAMAGUCHI AKIO
	1981-09-12
专利权人	FUJITSU LTD
公开日期	1981-09-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To try the improvement of yield by filling a plurality of growth melt materials in a reservoir for solution wherein the materials are split into small reservoirs and liquidus epitaxial growth is performed by filling obtained melts for growth in a slide boat. CONSTITUTION:A plurality of In, Ga, As, P are weighed to fill them in a reservoir 5 and a plummet 7 and a cover 8 are set. When materials are dissolved and homogenized, a pedestal 4 is moved to fit a hole with a reservoir 2 and melts 9 are filled in the reservoir 2. Finally, the remaining melts are exhausted to a reservoir 3. The lengths l2 of the pedestal 4 is longer than the width l1 of the arranged reserovirs 2 to prevent the evaporation of P, As. Next, solutions in the reservoirs 2 are solidified and taken out from the reservoirs 2 to obtain many small grains. In this composition, weighing accuracy will be improved and many melts of the same composition will be made at a time. Therefore, the yield of epitaxial wafers will be improved by using these small grains.
其他摘要	目的：通过在储存器中填充多个生长熔融材料来尝试提高产量，其中材料被分成小储存器，液相外延生长通过填充所获得的熔体在滑动舟皿中生长来进行。组成：称量多个In，Ga，As，P，将它们填充在储液器5中，并设置一个对中器7和一个盖子8。当材料溶解并均质化时，移动基座4以适合具有贮存器2的孔，并且将熔化物9填充在贮存器2中。最后，将剩余的熔体排出到贮存器3中。基座4的长度l2是比排列的研究2的宽度l1长，以防止P，As的蒸发。接下来，将储存器2中的溶液固化并从储存器2中取出以获得许多小颗粒。在该组合物中，将提高称重精度，并且一次可以制备相同组成的许多熔体。因此，通过使用这些小晶粒可以提高外延晶片的产量。
申请日期	1980-02-20
专利号	JP1981116616A
专利状态	失效
申请号	JP1980020002
公开（公告）号	JP1981116616A
IPC 分类号	C30B19/00 \| C30B19/06 \| H01L21/208 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89859
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KUSUKI TOSHIHIRO,AKITA KENZOU,FURUMIYA SATOSHI,et al. Manufacture of semiconductor wafers. JP1981116616A[P]. 1981-09-12.

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