Manufacture of photo semiconductor device with monitor

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	Manufacture of photo semiconductor device with monitor
其他题名	Manufacture of photo semiconductor device with monitor
	MATSUI KANEKI; KOMURO AKIRA; KURATA YUKIO; YAMAMOTO SABUROU; YANO MORICHIKA
	1979-06-11
专利权人	SHARP KK
公开日期	1979-06-11
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve mass-producibility with manufacture simplified by covering the entire surface of a semiconductor substrate with an insulating film after a plural number of grooves are formed in its surface, by diffusion-forming a light-reception diode on its flank surface exposed by removing the film of the groove flank, and then by pelletizing substrate by cutting off it at the center of the groove. CONSTITUTION:On P-type Si substrate 4, SiO2 film 5 is adherd and made into stripes by a photo-lithograpy method, which is used as a mask for etching to provide a plural number of concave grooves 6 in the surface of substrate 4. Next, film 5 is removed, SiO2 film 7 is adhered to the entire surface again, and film 7 on the flank surface of groove 6 is selectively etched and removed. On this flank surface exposed, N-type region 8 is diffusion-formed to obtain the light-reception diode which becomes a photo detector. Next, region 8 is fitted with N-type electrode 9, P- type electrode 10 is also fitted where film 7 on the bottom surface of groove 6 used as the mask at the time of forming region 8 is removed, and P-type electrode 11 is fitted to the reverse surface of substrate 4. Then, the substrate is pelletized by being cut off at the center part of groove 6.
其他摘要	目的：通过在其表面上形成多个凹槽之后用绝缘膜覆盖半导体衬底的整个表面来简化制造以提高批量生产能力，通过在其暴露的侧面上扩散形成光接收二极管去除凹槽侧面的薄膜，然后通过在凹槽的中心将其切断而将基底造粒。组成：在P型Si衬底4上，通过光刻方法将SiO 2膜5粘附并制成条纹，将其用作蚀刻掩模，以在衬底4的表面上提供多个凹槽6。接下来，去除膜5，再次在整个表面上粘附SiO 2膜7，并选择性地蚀刻并除去槽6的侧面上的膜7。在暴露的该侧面上，N型区域8被扩散形成以获得成为光电检测器的光接收二极管。接着，在区域8上安装N型电极9，并且在形成区域8时用作掩模的沟槽6的底面上的膜7被去除的状态下，也安装P型电极10，并且P型电极11安装到基板4的背面。然后，通过在凹槽6的中心部分处切断而使基板成颗粒状。
申请日期	1977-11-22
专利号	JP1979072991A
专利状态	失效
申请号	JP1977140361
公开（公告）号	JP1979072991A
IPC 分类号	H01L27/15 \| H01L31/12 \| H01S5/00 \| H01S5/026 \| H01L31/02 \| H01S3/096 \| H01S3/13
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89826
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	MATSUI KANEKI,KOMURO AKIRA,KURATA YUKIO,et al. Manufacture of photo semiconductor device with monitor. JP1979072991A[P]. 1979-06-11.

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