Fabricating method of semiconductor laser element

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	Fabricating method of semiconductor laser element
其他题名	Fabricating method of semiconductor laser element
	ITOU MICHIHARU; SHINOHARA HIROYA; YOSHIKAWA MITSUO
	1980-09-01
专利权人	FUJITSU LTD
公开日期	1980-09-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce the threshold current value of a semiconductor laser element at oscillation starting time by quenching the crystal of a second crystal layer formed on a first crystal layer from liquid phase and elminating the rugged phenomenon of crystal boundary surfaces. CONSTITUTION:Liquid reservoirs 31, 33, 35 forming a buffer layer, an active layer and a top layer are prepared on a carbon slider 37 when forming crystal layers of composition represented by Pb1-XSnXTe by a liquid phase epitaxial growing process. When the temperature in a furnace becomes predetermined temperature, the slider 37 is moved in a direction as designated by an arrow, the reservoir 31 is moved onto a dummy substrate 38 to precipitate the crystal layer in unstable composition on the substrate 38. Then, the slider 37 is moved to bring the liquid reservoir 31 onto a laser element substrate 40. Then, the substrate and the reservoir are quenched to form a buffer layer on the substrate 40 in this step. The reservoir 33 is moved onto the substrate 40 immediately before the liquid phase is solidified, an active layer is thus grown on the substrate 40. Then, the reservoir 35 is moved onto the substrate 40 to grow a top layer on the substrate 40.
其他摘要	目的：通过从液相淬灭在第一晶体层上形成的第二晶体层的晶体并消除晶体边界表面的粗糙现象，在振荡开始时减小半导体激光器元件的阈值电流值。组成：当通过液相外延生长工艺形成由Pb1-XSnXTe表示的组成晶体层时，在碳滑块37上制备形成缓冲层，活性层和顶层的液体储存器31,33,35。当炉内的温度变为预定温度时，滑块37沿箭头所示的方向移动，贮存器31移动到虚设基板38上，以使不稳定组合物中的晶体层沉淀在基板38上。然后，移动滑块37以将液体贮存器31带到激光元件基板40上。然后，在该步骤中，基板和贮存器被淬火以在基板40上形成缓冲层。在液相固化之前，贮存器33立即移动到基板40上，从而在基板40上生长活性层。然后，将贮存器35移动到基板40上以在基板40上生长顶层。
申请日期	1979-02-23
专利号	JP1980113393A
专利状态	失效
申请号	JP1979020968
公开（公告）号	JP1980113393A
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89809
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	ITOU MICHIHARU,SHINOHARA HIROYA,YOSHIKAWA MITSUO. Fabricating method of semiconductor laser element. JP1980113393A[P]. 1980-09-01.

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