Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	HIRAO MOTONAO; NAKAMURA MICHIHARU; DOI KOUNEN; TSUJI SHINJI; TAKEDA YUTAKA; MORI TAKAO
	1981-05-06
专利权人	HITACHI LTD
公开日期	1981-05-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the failure of a laser device by a construction wherein an P-N junction is provided in the crystal portion other than the active layer of a semiconductor laser device, and the density of impurities in this junction is controlled to keep it at the prescribed value, so that an excessive current bypasses the active layer. CONSTITUTION:N-type InP12, In0.73Ga0.27As0.63P0.37 active layer 13, and P-type InP14, P-type In0.83Ga0.27As0.37P0.63 15 layers are epitaxially grown on the surface (100) of an N-type InP substrate. An SiO2 mask 21 is provided in the direction (110), and the surface is etched by a mixed liquid of bromine and methanol to form a belt layer for enclosing light on the substrate 1 Next, P-type InP19 and N-type InP20 layers are laminated successively according to the prescribed density and thickness. After removing the oxide film on the surface, a eutective Au-Sn is evaporated on it, and a eutectic Cr-Au is evaporated on the p layer 15 side to form an electrode. Then it is cleaved at a right angle to the belt layer to complete a laser device. Since P-N-P-N junction is formed by layers 14-20-19-11 on the side of the buried layer, the current and voltage characteristics have a negative resisting region, so that it prevents the device from being destroyed even when an excessive current flows.
其他摘要	目的：通过在半导体激光器件的有源层以外的晶体部分中提供PN结的结构来防止激光器件的失效，并控制该结中的杂质密度以使其保持在规定值值，以便过电流绕过有源层。组成：N型InP12，In0.73Ga0.27As0.63P0.37有源层13和P型InP14，P型In0.83Ga0.27As0.37P0.63 15层外延生长在表面（100） N型InP衬底。在方向（110）上提供SiO 2掩模21，并且通过溴和甲醇的混合液体蚀刻表面以形成用于将光封闭在基板11上的带束层。接下来，P型InP19和N型InP20根据规定的密度和厚度依次层压各层。在去除表面上的氧化膜之后，在其上蒸发出共晶Au-Sn，并且在p层15侧上蒸发共晶Cr-Au以形成电极。然后将其与带束层成直角切割以完成激光装置。由于P-N-P-N结由埋层一侧的层14-20-19-11形成，因此电流和电压特性具有负阻抗区域，因此即使在过量电流流动时也能防止器件损坏。
申请日期	1979-09-28
专利号	JP1981049587A
专利状态	失效
申请号	JP1979124118
公开（公告）号	JP1981049587A
IPC 分类号	H01L21/208 \| H01L33/16 \| H01L33/28 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01S5/227 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89777
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	HIRAO MOTONAO,NAKAMURA MICHIHARU,DOI KOUNEN,et al. Semiconductor laser device. JP1981049587A[P]. 1981-05-06.

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