Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light emitting element | |
其他题名 | Semiconductor light emitting element |
OGURA MOTOTSUGU; SASAI YOICHI; MANNOU MASAYA; YOKOGAWA TOSHIYA; TAKAHASHI YASUHITO | |
1990-08-15 | |
专利权人 | MATSUSHITA ELECTRIC IND CO LTD |
公开日期 | 1990-08-15 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a laser having small inner distortion and high reliability by burying both sides of a mesa stripelike clad layer with ZnSSe layer lattice- matched to a mesa stripelike AlGaInP active layer. CONSTITUTION:A sandwich type double hetero junction semiconductor light emitting element in which GaInP or AlGaInP formed on a GaAs board 1 is formed as an active layer 3, and the layer 3 is interposed between clad layers 2 and 10 having larger energy band gap than that of the layer 3, smaller refractive index than that of the layer 3 and containing at least AlGaInP or AlInP is provided. The layer 10 of the side different from the side of the board 1 is formed in a mesa stripe state, and both sides of the clad layer 10 are buried with a ZnSSe layer 13 lattice-matched to the mesa stripelike AlGaInP or AlInP clad layer or the GaInP or AlGaInP active layer 3 to form an index guide type structure. Thus, a semiconductor laser having small distortion therein and high reliability can be obtained. |
其他摘要 | 目的:通过掩埋台面条状包层的两侧,使ZnSSe层晶格匹配到台面条状AlGaInP有源层,获得具有小内部畸变和高可靠性的激光器。组成:夹层型双异质结半导体发光元件,其中形成在GaAs板1上的GaInP或AlGaInP形成为有源层3,并且层3插入在具有比其更大的能带隙的包层2和10之间。在图3中,提供了比层3的折射率小并且至少包含AlGaInP或AlInP的层3的折射率。不同于板1侧面的层10以台面条状形成,并且包层10的两侧埋有与台面条状AlGaInP或AlInP包层晶格匹配的ZnSSe层13或GaInP或AlGaInP有源层3形成折射率引导型结构。因此,可以获得其中具有小失真和高可靠性的半导体激光器。 |
申请日期 | 1989-02-03 |
专利号 | JP1990205381A |
专利状态 | 失效 |
申请号 | JP1989024980 |
公开(公告)号 | JP1990205381A |
IPC 分类号 | H01L33/14 | H01L33/28 | H01L33/30 | H01L33/40 | H01L33/62 | H01S5/00 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89748 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | OGURA MOTOTSUGU,SASAI YOICHI,MANNOU MASAYA,et al. Semiconductor light emitting element. JP1990205381A[P]. 1990-08-15. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1990205381A.PDF(278KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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