Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser device and manufacture thereof | |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| TANETANI MOTOTAKA; MORIMOTO TAIJI; TAKAHASHI KOUSEI; MATSUMOTO AKIHIRO; MATSUI KANEKI | |
| 1988-05-21 | |
| 专利权人 | SHARP KK |
| 公开日期 | 1988-05-21 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To obtain a semiconductor laser device where a window region with little absorption of light is formed near the edge plane of a resonator in such a way that the device contains at least a first layer acting as a light-generating part, a second layer and a third layer which are formed on both sides of the first layer, whose conductivity type is reverse to each other and whose width of a forbidden band is wider than that of the first layer and whose refractive index is small. CONSTITUTION:An N-type AlxGa1-xAs clad layer 202, an n-type or p-type Alx' Ga1-x'As active layer 203 or 203', a p-type AlxGa1-xAs clad layer 204 and a p type GaAs contact layer 205 are grown in succession on an n-type GaAs substrate 201 by MOCVD, where x>x'. In addition, the thickness of the clad layer 204 is 0.8-2 mum and the thickness of the cap layer 205 is 0.2 mum. At the active layers 203, 203', the thickness of an inside 270 at a device and the thickness of an edge part 271 at the device are shaped to be different. |
| 其他摘要 | 目的：获得一种半导体激光器件，其中在谐振器的边缘平面附近形成具有很少光吸收的窗口区域，使得器件至少包含用作光产生部分的第一层，第二层形成在第一层两侧的第三层，其导电类型彼此相反，并且其禁带的宽度比第一层的宽度宽，并且其折射率小。组成：N型AlxGa1-xAs包层202，n型或p型Alx'Ga1-x'As有源层203或203'，p型AlxGa1-xAs包层204和ap +通过MOCVD在n型GaAs衬底201上连续生长GaAs接触层205，其中x> x'。另外，包层204的厚度为0.8-2μm，盖层205的厚度为0.2μm。在有源层203,203'处，器件处的内部270的厚度和器件处的边缘部分271的厚度被成形为不同。 |
| 申请日期 | 1986-11-06 |
| 专利号 | JP1988117483A |
| 专利状态 | 失效 |
| 申请号 | JP1986264330 |
| 公开（公告）号 | JP1988117483A |
| IPC 分类号 | H01S5/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/89573 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TANETANI MOTOTAKA,MORIMOTO TAIJI,TAKAHASHI KOUSEI,et al. Semiconductor laser device and manufacture thereof. JP1988117483A[P]. 1988-05-21. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1988117483A.PDF（372KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论