Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	ARIMOTO SATOSHI; KAGEYAMA SHIGEMI
	1992-05-12
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1992-05-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the deterioration of the double-heterojunction characteristic of a semiconductor laser device by forming an n-type GaAs layer on a substrate in such a way that an inverted mesa ridge stripe is buried, with the thickness being made lower than the height of the mesa, and a double-heterostructure of an AlGaAs material. CONSTITUTION:After a p-type GaAs substrate 11 is patterned by using a dielectric film 18 of SiN, etc., an inverted mesa ridge stripe is formed by etching in direction . After forming the stripe, an n-type GaAs block layer 12 is formed by performing the first epitaxial growth by using the film 18 as its is as a selective growth mask. Then, after removing the film 18, a p-type AlGaAs clad layer 13, AlGaAs active layer 14, n-type AlGaAs clad layer 15, and n-type GaAs contact layer 16 are successively formed on the block layer 12 in the second epitaxial growth process. Since the double-heterostructure and refractive index distribution, both of which are required for laser oscillation, can be realized in one time of epitaxial growth process without working, very high reliability can be obtained.
其他摘要	用途：为了防止半导体激光器件的双异质结特性的恶化，方法是在基板上形成n型GaAs层，使得埋入倒置的台面脊形条纹，使厚度低于高度台面和AlGaAs材料的双异质结构。组成：在通过使用SiN等介电膜18图案化p型GaAs衬底11之后，通过在方向上蚀刻形成倒置的台面脊形条纹。在形成条纹之后，通过使用膜18作为选择性生长掩模，通过进行第一外延生长来形成n型GaAs阻挡层12。然后，在去除膜18之后，在第二外延中的阻挡层12上依次形成p型AlGaAs包层13，AlGaAs有源层14，n型AlGaAs包层15和n型GaAs接触层16。成长过程。由于激光振荡所需的双异质结构和折射率分布可以在外延生长工艺的一次实现而不工作，因此可以获得非常高的可靠性。
申请日期	1990-09-27
专利号	JP1992137581A
专利状态	失效
申请号	JP1990262560
公开（公告）号	JP1992137581A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89555
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ARIMOTO SATOSHI,KAGEYAMA SHIGEMI. Semiconductor laser device. JP1992137581A[P]. 1992-05-12.

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