Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor optical device | |
其他题名 | Semiconductor optical device |
LEE, DONG HUN; PARK, SANG HO; BAEK, YONG SOON; SHIN, JANG UK; HAN, YOUNG TAK | |
2017-06-22 | |
专利权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
公开日期 | 2017-06-22 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | Provided herein is a semiconductor optical device, including a waveguide including lattices buried therein and having a buried hetero (BH) structure formed in an optical oscillation region in which single mode light is oscillated, a waveguide having a deep ridge structure formed in an optical modulation region, and a passive waveguide formed in a mode transition region interposed between the optical oscillation region and the optical modulation region, formed as a connecting structure of the waveguide having the BH structure extending from the optical oscillation region and the waveguide having the deep ridge structure extending from the optical modulation region, and inducing evanescent optical coupling, wherein a width of the waveguide having the BH structure in the mode transition region is smaller than a width of the waveguide having the deep ridge structure in the optical modulation region. |
其他摘要 | 本发明提供一种半导体光学器件,包括:波导,其包括埋入其中的晶格,并且具有形成在其中振荡单模光的光学振荡区域中的掩埋异质(BH)结构,具有在光学调制中形成的深脊结构的波导区域和形成在介于光学振荡区域和光学调制区域之间的模式过渡区域中的无源波导,形成为具有从光学振荡区域延伸的BH结构的波导和具有深脊结构的波导的连接结构从光学调制区域延伸,并引入瞬逝光学耦合,其中在模式转变区域中具有BH结构的波导的宽度小于在光学调制区域中具有深脊结构的波导的宽度。 |
申请日期 | 2016-08-19 |
专利号 | US20170179679A1 |
专利状态 | 授权 |
申请号 | US15/241362 |
公开(公告)号 | US20170179679A1 |
IPC 分类号 | H01S5/026 | H01S5/343 | H01S5/22 | G02B6/14 | G02B6/122 | G02B6/12 | H01S5/00 | G02F1/017 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/89491 |
专题 | 半导体激光器专利数据库 |
作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
推荐引用方式 GB/T 7714 | LEE, DONG HUN,PARK, SANG HO,BAEK, YONG SOON,et al. Semiconductor optical device. US20170179679A1[P]. 2017-06-22. |
条目包含的文件 | 条目无相关文件。 |
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