Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	KUME ICHIRO; OTA YOICHIRO; TAKAMIYA SABURO; SAKAI TOSHIYA
	1988-05-26
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1988-05-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To efficiently confine the light at an active layer inside a stripe-like groove and to realize a high-output and long-life laser by a method wherein a light-guide layer of a first conductivity type and an active layer whose refractive index is larger than said light-guide layer are formed in succession along the shape of a stripe-like groove and the active layer is curved inside the stripe width like an arc with a view to emitting a near-field image of the laser at one point. CONSTITUTION:The section of an n-type GaAs current-blocking layer 3, which is grown on a P-type AlXGa1-XAs clad layer 2, is an inverted trapezoid; the P-type AlXGa1-As clad layer 2 located at the bottom of the layer is dug in the shape of an arc and a stripe-like groove 10 is exposed. On said stripe-like groove 10 which is dug in the shape of the arc, a P-type AlGaAs light-guide layer 4, an active layer 5 and an N-type AlGaAs upper clad layer 6 are formed without deforming the shape of the arc. If an electric current is injected to a semiconductor laser device, the electric current is concentrated near the open part at the stripe-like groove 10 and flows there. Because the part where the electric current is easily concentrated most (the center of the active layer) is curved like the arc, the distance between the horizontal direction of a light-emitting part and the light-guide layer becomes short and it is possible to confine the light efficiently.
其他摘要	用途：有效地将光限制在条纹状凹槽内的有源层上，并通过一种方法实现高输出和长寿命的激光，其中第一导电类型的光导层和折射率的有源层大于所述导光层沿着条状凹槽的形状连续形成，并且有源层在条纹宽度内弯曲成弧形，以便在一点处发射激光的近场图像。组成：在P型AlXGa1-XAs包层2上生长的n型GaAs电流阻挡层3的截面是倒梯形;位于层底部的P型AlXGa1-As包层2被挖成弧形，并露出条状凹槽10。在所述以弧形挖出的条状凹槽10上，形成P型AlGaAs光导层4，有源层5和N型AlGaAs上包层6，而不会使形状变形。弧。如果向半导体激光器件注入电流，则电流集中在条状凹槽10处的开口部分附近并在那里流动。因为电流容易集中的部分（有源层的中心）像弧一样弯曲，所以发光部分的水平方向与光导层之间的距离变短，并且可以有效地限制光线。
申请日期	1986-11-11
专利号	JP1988122192A
专利状态	失效
申请号	JP1986268301
公开（公告）号	JP1988122192A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89393
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KUME ICHIRO,OTA YOICHIRO,TAKAMIYA SABURO,et al. Semiconductor laser device. JP1988122192A[P]. 1988-05-26.

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