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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
	MITO IKUO
	1993-02-03
专利权人	NIPPON ELECTRIC CO
公开日期	1993-02-03
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To obtain a semiconductor laser, in which the characteristics of vapor growth are utilized and production cost of which can be reduced, by laminating a clad layer, an active layer and a clad layer on a multilayer film substrate in which a buffer layer, a current confinement layer and a cut-off layer are laminated on a semiconductor substrate, an impurity is diffused in a striped manner and a shallow groove is shaped to a diffusion section. CONSTITUTION:A first conductivity type clad layer 6, an active layer 7 and a second conductivity type clad layer 8 are laminated on a multilayer film substrate in which a first conductivity type buffer layer 2, a second conductivity type current confinement layer 3 and a cut-off layer 4 in low impurity concentration are laminated on a first conductivity type semiconductor substrate 1, first conductivity type impurity diffusion 20 in depth reaching the buffer layer 2 is executed in a striped manner and a shallow groove 30 is shaped to said diffusion section 20. The buffer layer 2 such as a p-type InP buffer layer 2, the current confinement layer 3 such as an n-type InP current confinement layer 3, the cut-off layer 4 such as a non-doped InP cut-off layer 4 and a non-doped InGaAsP cap layer 5 are laminated on the substrate 1 such as a p-type InP substrate 1 in succession. The impurity diffusion 20 such as a p-type Zn diffusion region 20 is shaped, the groove 30 is formed on the surface of the region 20, and the clad layer 6 such as a p-type InP cla layer 6, the active layer 7 such as a non-doped InGaAsP active layer 7 and the clad layer 8 such as an n-type InP clad layer 8 are laminated.
其他摘要	目的：通过在包含缓冲层的多层薄膜基板上层压包层，有源层和包层，获得利用气相生长特性并降低生产成本的半导体激光器，在半导体衬底上层叠电流限制层和截止层，杂质以条纹方式扩散，浅沟槽成形为扩散部分。组成：第一导电类型包层6，有源层7和第二导电类型包层8层压在多层薄膜基板上，其中第一导电类型缓冲层2，第二导电类型电流限制层3和切割低杂质浓度的截止层4层叠在第一导电类型半导体衬底1上，以条纹方式执行深度达到缓冲层2的第一导电类型杂质扩散20，并且浅槽30成形为所述扩散部分20诸如p型InP缓冲层2的缓冲层2，诸如n型InP电流限制层3的电流限制层3，诸如非掺杂InP截止层的截止层4如图4所示，非掺杂的InGaAsP盖层5依次层叠在诸如p型InP衬底1的衬底1上。形成诸如p型Zn扩散区域20的杂质扩散20，在区域20的表面上形成沟槽30，并且形成诸如p型InP cla层6的包层6，有源层7例如，非掺杂的InGaAsP有源层7和诸如n型InP包层8的包层8被层叠。
申请日期	1986-05-30
专利号	JP1993008875B2
专利状态	失效
申请号	JP1986125464
公开（公告）号	JP1993008875B2
IPC 分类号	H01S \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89370
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	MITO IKUO. -. JP1993008875B2[P]. 1993-02-03.

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JP1993008875B2.PDF（203KB）	专利		开放获取	CC BY-NC-SA	请求全文