Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	AYABE MASAAKI; MATSUDA OSAMU; KANEKO KUNIO
	1983-10-19
专利权人	SONY KK
公开日期	1983-10-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve the mass productivity of a semiconductor laser by forming overhangs at an epitaxial layer which contains an active layer, cleaving at thin overhangs, thereby enabling to set an accurate resonator length and facilitating the formation of a protecting film. CONSTITUTION:An N type A GaAs, an N type GaAs active layer, a P type A GaAs, and an N type GaAs are epitaxially formed at 12 on an N type GaAs substrate 11, and a P type parallel grooves 18 which reach an upper clad layer are arranged in the prescribed width at the prescribed interval. Strip resist masks are covered at an interval G, a neck 19a is formed at an interval corresponding to the resonator length of the laser, and the inner end 19b of the neck is disposed outside the grooves 18. Grooves 20 are formed by selectively etching, overhangs 12A of the layer 12 are formed, and the width W is formed equaly to the width of the groove 18 under the narrow part of the mask. Lines d1, d2 are cut along the cleavage surface in the desired resonator length across the grooves 18, a CVD Si3N4 protecting film is attached onto the substrate 11 of not finely pulverized state, and the substrate 11 is eventually divided along the lines (e), (f) to complete it. According to this structure, the formation of the protecting film is simple, and a semiconductor laser can be manufactured in mass production in a high yield.
其他摘要	目的：通过在包含有源层的外延层上形成悬突来提高半导体激光器的批量生产率，在薄的悬垂处切割，从而能够设定精确的谐振器长度并便于形成保护膜。组成：N型GaAs，N型GaAs有源层，P型A GaAs和N型GaAs外延形成在N型GaAs衬底11上的12处，以及到达上部的P型平行凹槽18包层以预定的间隔以规定的宽度排列。条形抗蚀剂掩模以间隔G覆盖，颈部19a以对应于激光器的谐振器长度的间隔形成，颈部的内端19b设置在凹槽18的外部。通过选择性蚀刻形成凹槽20，形成层12的突出部分12A，并且宽度W形成等于掩模的窄部分下方的凹槽18的宽度。沿着裂缝表面沿着沟槽18切割所需谐振器长度的线d1，d2，将CVD Si3N4保护膜附着到未精细粉碎状态的基板11上，并且最终沿着线（e）分割基板11。，（f）完成它。根据该结构，保护膜的形成简单，并且可以以高产率大规模生产半导体激光器。
申请日期	1982-04-13
专利号	JP1983178581A
专利状态	失效
申请号	JP1982061258
公开（公告）号	JP1983178581A
IPC 分类号	H01L21/301 \| H01S5/00 \| H01S5/02 \| H01S5/022 \| H01S5/042 \| H01L21/78 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89027
专题	半导体激光器专利数据库
作者单位	SONY KK
推荐引用方式 GB/T 7714	AYABE MASAAKI,MATSUDA OSAMU,KANEKO KUNIO. Manufacture of semiconductor laser. JP1983178581A[P]. 1983-10-19.

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