Semiconductor laser structure including quantum dot

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	Semiconductor laser structure including quantum dot
其他题名	Semiconductor laser structure including quantum dot
	OH, DAE KON; LEE, JIN HONG; KIM, JIN SOO; HONG, SUNG UI; KWACK, HO SANG
	2007-06-14
专利权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
公开日期	2007-06-14
授权国家	美国
专利类型	发明申请
摘要	Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.
其他摘要	提供一种分布式反馈半导体激光器结构，包括：第一包层;形成在第一包层上的第一脊形波导;形成在第一脊形波导上的有源层;形成在有源层上的第二脊形波导;形成在第二脊形波导上的第二覆层;形成在第二包层上的欧姆接触层;多个光栅形成在第一和第二包层中的至少一个中，与第一脊形波导或第二脊形波导形成预定角度，并周期性地沿第一或第二脊形波导的纵向排列。结果，能够大规模生产的一般全息光刻工艺应用于本发明，从而可以减少处理时间。此外，提供了一种使用量子点有源层的分布式反馈半导体激光器结构，其不需要额外的工艺来获得纯单波长。
申请日期	2006-11-09
专利号	US20070133639A1
专利状态	授权
申请号	US11/595470
公开（公告）号	US20070133639A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/89019
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	OH, DAE KON,LEE, JIN HONG,KIM, JIN SOO,et al. Semiconductor laser structure including quantum dot. US20070133639A1[P]. 2007-06-14.