Semiconductor light emitting element

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	Semiconductor light emitting element
其他题名	Semiconductor light emitting element
	FUKUI TAKASHI; HORIKOSHI YOSHIHARU
	1982-11-18
专利权人	NIPPON TELEGRAPH & TELEPHONE
公开日期	1982-11-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a highly efficient light emission diode of a visible rays band by a method wherein indirect transition-type semiconductor crystal, which does not have light emission property originally is given a super lattice composition and is used as an activation layer. CONSTITUTION:An activation layer 3, made of a semiconductor super lattice composition in which a periodical construction is composed by piling semiconductor crystal layers, each of which has a cartain thickness of 500Angstrom and has a lattice constant identical with a semiconductor crystal layer with an indirect transition-type band gap, for instance a 100 plain GaP substrate 1 and has small electron affinity and large band gap, reciprocally on the substrate 1, is composed of, for instance, GaP-AlGaP. And on and under the activation layer 3, clad layers 2 and 4 composed of the same semiconductor material as the semiconductor crystal of the super lattice which has wider band gap or of a semiconductor which has wide band gap and small refractive index, for instance AlGaP are formed.
其他摘要	目的：通过一种方法获得可见光带的高效发光二极管，其中最初不具有发光性能的间接过渡型半导体晶体被赋予超晶格组成并用作激活层。组成：一个活化层3，由半导体超晶格组成，其中周期性结构由堆叠半导体晶体层组成，每个晶体层的卡氏厚度为500埃，晶格常数与间接半导体晶体层相同过渡型带隙，例如100平面GaP衬底1，并且在衬底1上往复地具有小的电子亲和力和大的带隙，例如由GaP-AlGaP构成。并且在激活层3上面和下面，包层2和4由与具有较宽带隙的超晶格的半导体晶体相同的半导体材料构成，或者由具有宽带隙和小折射率的半导体构成，例如AlGaP形成。
申请日期	1981-05-15
专利号	JP1982187986A
专利状态	失效
申请号	JP1981072211
公开（公告）号	JP1982187986A
IPC 分类号	H01L33/06 \| H01L33/30 \| H01L33/34 \| H01S5/00 \| H01S5/343 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88970
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGRAPH & TELEPHONE
推荐引用方式 GB/T 7714	FUKUI TAKASHI,HORIKOSHI YOSHIHARU. Semiconductor light emitting element. JP1982187986A[P]. 1982-11-18.

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