Method of forming fine trench

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	Method of forming fine trench
其他题名	Method of forming fine trench
	IDOTA TAKESHI; TAKEUCHI YOSHINORI
	1988-03-08
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1988-03-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a stripe-shape fine trench with a stable width by making an InGaAsP layer with a thickness of 0.1-0.4mum grow on InP layers by epitaxial growth. CONSTITUTION:Three InP layers 2, 3 and 4 which have respectively different dopant and carrier concentrations are made to grow on the face (100) of an InP substrate 1 by epitaxial growth. Then an InGaAsP layer 5 whose thickness is limited to a range of 0.1-0.4mum is made to grow by epitaxial growth. In a process wherein the InGaAsP layer 5 is etched with H2SO4+H2O2+H2O with a dielectric film 6 in which a stripe-shape window is formed as a mask, the width W1 of the stripe-shape window formed in the dielectric film 6 is expanded to the width W2 of the stripe-shape window formed in the InGaAsP layer 5 by undercut. By selecting the thickness of the InGaAsP layer to be more than 0.1mum, the variations in the width of the stripe-shape trench can be reduced without requiring high grade etching time control.
其他摘要	目的：通过外延生长在InP层上生长厚度为0.1-0.4μm的InGaAsP层，获得具有稳定宽度的条形细沟槽。组成：通过外延生长使具有不同掺杂剂和载流子浓度的三个InP层2,3和4在InP衬底1的面（100）上生长。然后，通过外延生长使厚度限制在0.1-0.4μm范围内的InGaAsP层5生长。在其中用H 2 SO 4 + H 2 O 2 + H 2 O蚀刻InGaAsP层5并且其中形成条形窗口作为掩模的介电膜6的过程中，在介电膜6中形成的条形窗口的宽度W1是通过底切扩展到在InGaAsP层5中形成的条形窗口的宽度W2。通过选择InGaAsP层的厚度大于0.1μm，可以减小条形沟槽宽度的变化，而不需要高级蚀刻时间控制。
申请日期	1986-08-22
专利号	JP1988053931A
专利状态	失效
申请号	JP1986197545
公开（公告）号	JP1988053931A
IPC 分类号	H01L21/302 \| H01L21/306 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88370
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	IDOTA TAKESHI,TAKEUCHI YOSHINORI. Method of forming fine trench. JP1988053931A[P]. 1988-03-08.

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