Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	HIRAYAMA FUKUICHI; NAKANO MUNEAKI; WADA MASARU
	1988-07-26
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1988-07-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To inject efficiently an electric current into a groove part by forming chemical compound semiconductor layers consisting of the first clad layer, an active layer, the second clad layer as well as a top layer having a forbidden band which is broader than that of a semiconductor on a semiconductor substrate having two parallel protruding parts and by forming a zinc diffused region that reaches the second clad layer after passing through the top layer. CONSTITUTION:Two parallel ridges are formed on an N-type GaAs substrate 1 by interposing a groove between two ridges. The first clad layer 3 of an N-type Ga0.55Al0.44As, an active layer 4 of a non-doped Ga0.92Al0.08As, the second clad layer 5 of a P-type Ga0.56Al0.44As, a top layer 6 of an N-type Ga0.9Al0.1As grow in sequence on the ridges as the first, the second, the third, and the fourth layers respectively. After a V-shaped groove 7 is formed at the top layer 6 of the fourth layer located right above this groove, zinc is diffused on the whole plane of this layer and a zinc diffused region 7 is formed. After that, a P-side ohmic electrode 8 and an N-side ohmic electrode 9 are formed. A prepared wafer is cloven and a laser device is obtained.
其他摘要	目的：通过形成由第一覆层，有源层，第二覆层以及具有比a宽带的禁带的顶层构成的化合物半导体层，有效地将电流注入凹槽部分。半导体衬底上的半导体具有两个平行的突出部分，并且通过形成在穿过顶层之后到达第二覆层的锌扩散区域。组成：通过在两个脊之间插入一个凹槽，在N型GaAs衬底1上形成两个平行的脊。 N型Ga0.55Al0.44As的第一包层3，非掺杂Ga0.92Al0.08As的有源层4，P型Ga0.56Al0.44As的第二包层5，顶层6个N型Ga0.9Al0.1As分别在脊上分别作为第一，第二，第三和第四层生长。在位于该凹槽正上方的第四层的顶层6处形成V形凹槽7之后，锌在该层的整个平面上扩散，并形成锌扩散区域7。之后，形成P侧欧姆电极8和N侧欧姆电极9。制备的晶片是偶然的并且获得激光装置。
申请日期	1987-01-23
专利号	JP1988181495A
专利状态	失效
申请号	JP1987014683
公开（公告）号	JP1988181495A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88203
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	HIRAYAMA FUKUICHI,NAKANO MUNEAKI,WADA MASARU. Semiconductor laser device. JP1988181495A[P]. 1988-07-26.

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