Semiconductor integrated light source

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	Semiconductor integrated light source
其他题名	Semiconductor integrated light source
	YAMAGUCHI MASAYUKI
	1991-12-17
专利权人	日本電気株式会社
公开日期	1991-12-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain an integrated light source capable of carrying out high density wave length multi-transmission by forming an optical waveguide which guides laser light from a semiconductor laser to a modulator and a field absorption type semiconductor optical modulator where the absorption characteristic of light varies with a single axis mode semiconductor laser and voltage application on the same substrate. CONSTITUTION:Four wavelength variable DBR lasers which comprise an active region 201, a phase control region 202, and a DBR region 203, are arrayed on a semiconductor substrate 100 where a field absorption type modulator 300 is formed, which adjoins the DBR region 203 of the DBR laser. The light output from the modulator 300 is adapted to synthesize its waves. Wave synthesizers 400 are integrated on the same substrate. The average oscillation threshold current of four devices, which oscillate in a single axis mode near the wavelength of 55mum by injecting current to the active layer active region, turns to 25mA and the oscillation wavelength is controlled by injecting electric current into the phase control region 202 and the DBR control region 203 so that its width may range 60Angstrom to 90Angstrom .
其他摘要	目的：通过形成将半导体激光器的激光引导至调制器的光波导和光吸收特性的场吸收型半导体光调制器，获得能够进行高密度波长多次传输的集成光源。使用单轴模式半导体激光器并在同一基板上施加电压。组成：四个波长可变DBR激光器，包括有源区201，相位控制区202和DBR区203，阵列在半导体衬底100上，在半导体衬底100上形成场吸收型调制器300，其邻接DBR区域203 DBR激光器。调制器300的光输出适于合成其波。波合成器400集成在同一衬底上。通过向有源层有源区注入电流，在55μm波长附近以单轴模式振荡的四个器件的平均振荡阈值电流变为25mA，通过将电流注入相位控制区来控制振荡波长。 202和DBR控制区域203使得其宽度可以在60埃至90埃的范围内。
申请日期	1990-04-03
专利号	JP1991286587A
专利状态	失效
申请号	JP1990088703
公开（公告）号	JP1991286587A
IPC 分类号	H04B10/40 \| H01S5/00 \| H04B10/00 \| H04B10/50 \| H04B10/60 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88183
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI. Semiconductor integrated light source. JP1991286587A[P]. 1991-12-17.

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