Method of manufacturing semiconductor laser

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	Method of manufacturing semiconductor laser
其他题名	Method of manufacturing semiconductor laser
	NAGAI, YUTAKA
	1996-09-17
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA
公开日期	1996-09-17
授权国家	美国
专利类型	授权发明
摘要	A method of manufacturing a ridge-buried semiconductor laser includes growing semiconductor layers including at least a first conductivity type lower cladding layer, an active layer, and a second conductivity type upper cladding layer on a semiconductor substrate; forming a striped-shaped impurity diffusion source film including atoms producing the second conductivity type when diffused into the upper cladding layer at a stripe-shaped region which becomes a top of a ridge; ridge-etching the semiconductor crystal layers using a ridge-etching mask including the impurity diffusion source film so that the second conductivity type upper cladding layer has a ridge shape; growing a first conductivity type current blocking layer to bury the ridge; and forming a high dopant impurity concentration region including a dopant impurity producing the second conductivity type impurity in the second conductivity type upper cladding layer of the ridge region by diffusing atoms from the stripe-shaped impurity diffusion source film by heat treatment. This method provides a semiconductor laser in which the element resistance is reduced, high-frequency superposition is possible at a practical level, and characteristics at the time of the high-frequency superposition are improved.
其他摘要	一种制造脊埋半导体激光器的方法，包括在半导体衬底上生长包括至少第一导电型下包层，有源层和第二导电型上包层的半导体层;形成条形杂质扩散源膜，其包括在成为脊的顶部的条形区域中扩散到上包层中时产生第二导电类型的原子;使用包括杂质扩散源膜的脊蚀刻掩模对半导体晶体层进行脊形蚀刻，使得第二导电型上覆层具有脊形状;生长第一导电型电流阻挡层以掩埋脊;通过热处理从条形杂质扩散源膜扩散原子，在脊区域的第二导电型上部包层中形成包括产生第二导电型杂质的掺杂剂杂质的高掺杂杂质浓度区域。该方法提供了一种半导体激光器，其中元件电阻减小，在实际水平上可以进行高频叠加，并且改善了高频叠加时的特性。
申请日期	1994-12-09
专利号	US5556804
专利状态	失效
申请号	US08/352496
公开（公告）号	US5556804
IPC 分类号	H01S5/323 \| H01S5/20 \| H01S5/00 \| H01S5/343 \| H01S5/32 \| H01S5/30 \| H01S5/223 \| H01L21/20
专利代理人	-
代理机构	LEYDIG,VOIT & MAYER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87923
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAGAI, YUTAKA. Method of manufacturing semiconductor laser. US5556804[P]. 1996-09-17.

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