Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	AZUMI JUNICHI; INABA FUMIO; ITO HIROMASA
	1990-01-16
专利权人	INABA FUMIO
公开日期	1990-01-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain high emitting output by surrounding the first conductivity type semiconductor layer with the current checking layer consisting of at least one layer and the second conductivity type semiconductor layer, and forming an active region along the first conductivity type semiconductor layer. CONSTITUTION:An epitaxial layer 134 is laminated on a substrate 101, and a columnar projection is formed almost vertically. A current checking layer 130 is so formed as to bury the projection on the layer 134. An epitaxial layer 102 is formed almost vertically to the substrate 101 inside the recess. An ohmic electrode 107 is formed on the layer 130 and the layer 102, and an orhmic electrode 1 06 is formed at the rear of the substrate 10 By letting currents flow to both electrodes of p side electrode 106 and the n side electrode 107, carriers are implanted to the active region formed almost vertically to the substrate 101, and the light emission by recoupling of the carriers is generated. The emitted light can be taken out as light output from an opening 150 which is formed on the electrode 107 side, i.e., at the upper face of the projection of the layer 134.
其他摘要	用途：通过用由至少一层和第二导电类型半导体层组成的电流检查层包围第一导电类型半导体层，并沿第一导电类型半导体层形成有源区，来获得高发射输出。组成：外延层134层压在基板101上，并且几乎垂直地形成柱状突起。形成电流检查层130以将突起掩埋在层134上。外延层102几乎垂直于凹槽内的基板101形成。在层130和层102上形成欧姆电极107，并且在基板101的后部形成有源电极106.通过使电流流到p侧电极106和n侧电极107的两个电极，将载流子注入到几乎垂直于衬底101形成的有源区中，并产生通过再耦合载流子的光发射。发射的光可以作为从开口150输出的光输出，开口150形成在电极107侧，即在层134的投影的上表面。
申请日期	1988-06-29
专利号	JP1990010787A
专利状态	失效
申请号	JP1988159395
公开（公告）号	JP1990010787A
IPC 分类号	H01L33/08 \| H01L33/14 \| H01L33/30 \| H01L33/36 \| H01S5/00 \| H01S5/18 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87615
专题	半导体激光器专利数据库
作者单位	INABA FUMIO
推荐引用方式 GB/T 7714	AZUMI JUNICHI,INABA FUMIO,ITO HIROMASA. Semiconductor light emitting device. JP1990010787A[P]. 1990-01-16.

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