Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
ARIMOTO, SATOSHI; YOSHIDA, NAOHITO | |
1993-05-11 | |
专利权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
公开日期 | 1993-05-11 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor first cladding layer disposed on the substrate; a semiconductor active layer disposed on the first cladding layer; a second conductivity type semiconductor second cladding layer disposed on the active layer; a current concentration and collection structure for confining current flow to part of the active layer including a second conductivity type ridge structure disposed on the second cladding layer, a first conductivity type semiconductor current blocking layer disposed directly on the second cladding layer and adjacent to and contacting the ridge structure, the ridge structure including a semiconductor etch stopping layer different in composition from and disposed on the second cladding layer and a second conductivity type semiconductor third cladding layer disposed on and different in composition from the etch stopping layer, and a second conductivity type semiconductor transition layer; a second conductivity type semiconductor contacting layer contacting the current concentration and collection structure; and first and second electrodes respectively disposed on the substrate and the contacting layer. |
其他摘要 | 半导体激光器包括第一导电类型半导体衬底;第一导电型半导体第一包层设置在基板上;半导体有源层设置在第一覆层上;第二导电型半导体第二包层设置在有源层上;用于限制电流流到部分有源层的电流集中和收集结构,包括设置在第二覆层上的第二导电型脊结构,第一导电型半导体电流阻挡层直接设置在第二覆层上并邻近并接触所述脊结构,所述脊结构包括半导体蚀刻停止层,所述半导体蚀刻停止层的组成与所述第二包覆层不同并且设置在所述第二包覆层上,所述第二导电类型半导体第三包覆层设置在所述蚀刻停止层上并且与所述蚀刻停止层的组成不同半导体过渡层;第二导电型半导体接触层,其接触电流集中和收集结构;第一和第二电极分别设置在基板和接触层上。 |
申请日期 | 1991-09-11 |
专利号 | US5210767 |
专利状态 | 失效 |
申请号 | US07/757808 |
公开(公告)号 | US5210767 |
IPC 分类号 | H01L33/00 | H01S5/223 | H01S5/00 | H01S5/20 | H01S3/19 |
专利代理人 | - |
代理机构 | LEYDIG,VOIT & MAYER |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87441 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | ARIMOTO, SATOSHI,YOSHIDA, NAOHITO. Semiconductor laser. US5210767[P]. 1993-05-11. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US5210767.PDF(937KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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