Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser diode | |
| 其他题名 | Semiconductor laser diode |
| NOMOTO, ETSUKO; OHTOSHI, TSUKURU | |
| 2006-08-24 | |
| 专利权人 | LUMENTUM JAPAN, INC. |
| 公开日期 | 2006-08-24 |
| 授权国家 | 美国 |
| 专利类型 | 发明申请 |
| 摘要 | A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern. |
| 其他摘要 | 一种半导体激光器件，其能够以高功率操作并且具有能够抑制扭结，减少损耗并同时稳定偏振方向的结构，并且其中光学图案随着从有源层和晶体组合物的后退而单调减小容易控制。引入组成与包层不同的多个高折射率层，其分散在比光点尺寸宽的范围内，用于引导更接近半导体激光器的下包层的光并稳定偏振方向。随着从光学图案的有源层后退，电场强度单调减小。 |
| 申请日期 | 2005-08-03 |
| 专利号 | US20060187987A1 |
| 专利状态 | 授权 |
| 申请号 | US11/195792 |
| 公开（公告）号 | US20060187987A1 |
| IPC 分类号 | H01S5/20 | H01S5/00 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/87283 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | NOMOTO, ETSUKO,OHTOSHI, TSUKURU. Semiconductor laser diode. US20060187987A1[P]. 2006-08-24. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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