Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor device | |
其他题名 | Semiconductor device |
YOKOGAWA TOSHIYA; OGURA MOTOTSUGU | |
1988-05-30 | |
专利权人 | MATSUSHITA ELECTRIC IND CO LTD |
公开日期 | 1988-05-30 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To form a single crystal epitaxial film of high quality on an Si substrate, by forming a distorted superlattice layer composed of two or more kinds of II-VI compound semiconductor on a semiconductor substrate having a part covered with an insulative film and an exposed part. CONSTITUTION:An SiO2 thermal oxidation film 2 is formed on an Si substrate 1 by thermal oxidation method, and a striped pattern is formed by a photoetching method. Sequential epitaxial growth is performed by MOVPE method under the following conditions: substrate temperature 400 deg.C, flow rate of H2 of DMZ=2.5cc/min, flow rate of H of DMS=9cc/min, tatal flow rate=4 l/min, and reduced pressure 100 torr. A distorted superlattice layer 3 of ZnS and ZnS0.9Se0.1 are stacked on the substrate 1, and thereon the following are stacked in order: a clad layer 4 of a ZnS single crystal thin film, a light guide layer 5 of ZnS0.5Se0.5 single crystal thin film, and the clad layer 4 of ZnS single crystal thin film. |
其他摘要 | 用途:在Si衬底上形成高质量的单晶外延膜,在半导体衬底上形成由两种或多种II-VI化合物半导体组成的畸变超晶格层,半导体衬底上覆盖有绝缘膜和暴露的部分部分。组成:通过热氧化法在Si衬底1上形成SiO2热氧化膜2,并通过光刻法形成条纹图案。在以下条件下通过MOVPE方法进行顺序外延生长:基板温度400℃,DMZ的H 2流速= 2.5cc / min,DMS的流速= 9cc / min,流速= 4L /分钟,减压100托。将ZnS和ZnS0.9Se0.1的变形超晶格层3层叠在基板1上,依次层叠以下:ZnS单晶薄膜的包层4,ZnS0.5Se0的导光层5 .5单晶薄膜,以及ZnS单晶薄膜的包层4。 |
申请日期 | 1986-11-14 |
专利号 | JP1988126288A |
专利状态 | 失效 |
申请号 | JP1986272505 |
公开(公告)号 | JP1988126288A |
IPC 分类号 | H01L21/365 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87123 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | YOKOGAWA TOSHIYA,OGURA MOTOTSUGU. Semiconductor device. JP1988126288A[P]. 1988-05-30. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988126288A.PDF(239KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论