Superluminescent diode

OPT OpenIR > 半导体激光器专利数据库

	Superluminescent diode
其他题名	Superluminescent diode
	NAGAI, YUTAKA; KAJIWARA, KENICHI
	1993-06-29
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA
公开日期	1993-06-29
授权国家	美国
专利类型	授权发明
摘要	A superluminescent diode includes a substrate; a double heterojunction structure including a first conductivity type cladding layer, an undoped or first or second conductivity type active layer, and a second conductivity type cladding layer disposed on said substrate; a first conductivity type cap layer disposed on the second conductivity type cladding layer; and a second conductivity type stripe-shaped diffusion region penetrating the cap layer and reaching into the second conductivity type cladding layer. Current is injected into the active layer through the diffusion region. The stripe-shaped diffusion region extends from a front facet toward but not reaching a rear facet and is inclined an angle in a range from 3 to 20 degrees with respect to the front facet. Accordingly, repetition of reflection and amplification of light having a directionality perpendicular to the facets is decreased and the effective reflection of light from both facets is decreased, resulting in an SLD that can operate stably even in high power output operation without inviting laser oscillation and that can be produced with a high yield.
其他摘要	超辐射发光二极管包括衬底;双异质结结构，包括第一导电型包层，未掺杂或第一或第二导电型有源层，和设置在所述基板上的第二导电型包层;第一导电型覆盖层，设置在第二导电型覆层上;第二导电型条形扩散区穿透盖层并进入第二导电型包层。电流通过扩散区注入有源层。条形扩散区域从前刻面朝向后刻面延伸但未到达后刻面，并且相对于前刻面倾斜3至20度的角度。因此，具有垂直于小平面的方向性的光的反射和放大的重复减少，并且来自两个小平面的光的有效反射减小，导致即使在高功率输出操作中也能够稳定地操作而不引起激光振荡的SLD，并且可以高产量生产。
申请日期	1992-03-12
专利号	US5223722
专利状态	失效
申请号	US07/850273
公开（公告）号	US5223722
IPC 分类号	H01L33/00 \| H01S5/042 \| H01S5/10 \| H01S5/00 \| H01L33/10 \| H01L33/14 \| H01L33/30 \| H01S3/19
专利代理人	-
代理机构	LEYDIG,VOIT & MAYER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87112
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAGAI, YUTAKA,KAJIWARA, KENICHI. Superluminescent diode. US5223722[P]. 1993-06-29.

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