Semiconductor light emitting device and method of manufacturing the same

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	Semiconductor light emitting device and method of manufacturing the same
其他题名	Semiconductor light emitting device and method of manufacturing the same
	WANG, SHIH YUAN; CHEN, YONG; CORZINE, SCOTT W.; KERN, R. SCOTT; COMAN, CARRIE CARTER; KRAMES, MICHAEL R.; KISH, FREDERICK A. JR.; KANEKO, YAWARA
	2006-09-20
专利权人	LUMILEDS LIGHTING U.S., LLC
公开日期	2006-09-20
授权国家	欧洲专利局
专利类型	授权发明
摘要	A buried reflector (50) in an epitaxial lateral growth layer (71) forms a part of a light emitting device and allows for the fabrication of a semiconductor material (71) that is substantially low in dislocation density. The laterally grown material (71) is low in dislocation defect density where it is grown over the buried reflector (50) making it suitable for high quality optical light emitting devices, and the embedded reflector (50) eliminates the need for developing an additional reflector.
其他摘要	外延横向生长层（71）中的掩埋反射器（50）形成发光器件的一部分，并且允许制造位错密度基本上低的半导体材料（71）。横向生长的材料（71）的位错缺陷密度低，其在掩埋反射器（50）上生长，使其适用于高质量的光学发光器件，并且嵌入式反射器（50）消除了开发附加反射器的需要。。
申请日期	1998-11-10
专利号	EP0951076B1
专利状态	失效
申请号	EP1998121120
公开（公告）号	EP0951076B1
IPC 分类号	H01L33/00 \| H01L21/20 \| H01S5/183 \| H01L33/10 \| H01L33/12 \| H01L33/24 \| H01S5/00 \| H01S5/02 \| H01S5/14 \| H01S5/187 \| H01S5/323 \| H01S5/343
专利代理人	-
代理机构	LIESEGANG, ROLAND
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86964
专题	半导体激光器专利数据库
作者单位	LUMILEDS LIGHTING U.S., LLC
推荐引用方式 GB/T 7714	WANG, SHIH YUAN,CHEN, YONG,CORZINE, SCOTT W.,et al. Semiconductor light emitting device and method of manufacturing the same. EP0951076B1[P]. 2006-09-20.