High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode

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	High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode
其他题名	High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode
	FUKUNAGA, TOSHIAKI; WADA, MITSUGU; MATSUMOTO, KENJI
	2001-10-25
专利权人	NICHIA CORPORATION
公开日期	2001-10-25
授权国家	美国
专利类型	发明申请
摘要	In a semiconductor-laser device: an n-type cladding layer, an optical-waveguide layer, an Inx3Ga1-x3As1-y3Py3 compressive-strain quantum-well active layer (0
其他摘要	在半导体激光器件中：n型包覆层，光波导层，Inx3Ga1-x3As1-y3Py3压缩应变量子阱有源层（0
申请日期	2001-04-20
专利号	US20010033591A1
专利状态	失效
申请号	US09/838339
公开（公告）号	US20010033591A1
IPC 分类号	H01S5/343 \| H01S5/223 \| H01S5/34 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86914
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	FUKUNAGA, TOSHIAKI,WADA, MITSUGU,MATSUMOTO, KENJI. High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode. US20010033591A1[P]. 2001-10-25.