Semiconductor laser with variable wavelength

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	Semiconductor laser with variable wavelength
其他题名	Semiconductor laser with variable wavelength
	MITO IKUO
	1989-02-23
专利权人	NEC CORP
公开日期	1989-02-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To continuously vary an oscillation frequency without changing an oscillation threshold value by installing an active layer whose gain is obtained from a light-emitting region and a Bragg reflection region from among the light-emitting region, a phase control region and the Bragg reflection region. CONSTITUTION:After a diffraction grating 80 has been formed in a Bragg reflection (DBR) region 300 of a substrate 1, a light waveguide layer 2, a barrier layer 3, an active layer 4 and a clad layer 5 are laminated one upon another. Then, the layers 3, 4, 5 are removed selectively exclusive of a light-emitting region 100 and the DBR region 300; a second clad layer 10 is laminated. In succession, after grooves 51, 52 sandwiching a stripe 50 to be used as the light- emitting region have been formed, a current-blocking layer 6, a current-confining layer 7, a buried layer 8 and a contact layer 9 are formed. Electrodes 20, 21, 22 are formed on the side of the layer 9. During this process, a semiconductor layer around the contact layer 9 between individual regions and around the stripe 50 is removed so that an electric current can flow to the three regions independently.
其他摘要	用途：通过在发光区域，相位控制区域和布拉格反射中安装从发光区域和布拉格反射区域获得增益的有源层，在不改变振荡阈值的情况下连续改变振荡频率地区。组成：在基板1的布拉格反射（DBR）区域300中形成衍射光栅80后，光波导层2，阻挡层3，有源层4和包层5彼此层叠。然后，选择性地去除层3,4,5，不包括发光区域100和DBR区域300;层叠第二包层10。接着，在形成夹着条50以用作发光区的凹槽51,52之后，形成电流阻挡层6，电流限制层7，掩埋层8和接触层9。。电极20,21,22形成在层9的侧面上。在此过程中，在各个区域之间和条带50周围的接触层9周围的半导体层被去除，使得电流可以独立地流到三个区域。
申请日期	1987-08-19
专利号	JP1989049293A
专利状态	失效
申请号	JP1987206117
公开（公告）号	JP1989049293A
IPC 分类号	H01S5/00 \| H01S5/06 \| H01S5/0625 \| H01S5/125 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86556
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MITO IKUO. Semiconductor laser with variable wavelength. JP1989049293A[P]. 1989-02-23.

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