Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor device | |
其他题名 | Manufacture of semiconductor device |
FURUMIYA SATOSHI; YAMAGUCHI AKIO | |
1982-12-04 | |
专利权人 | FUJITSU KK |
公开日期 | 1982-12-04 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To eliminate crystal defects produced in an epitaxial layer grown on a III-V compound semiconductor InP substrate, by irradiating laser light having a wavelength less than light emisssion and detection wave length on a multilayer structural semiconductor layer. CONSTITUTION:YAG laser light is irradiated from the side of the third InP layer 9 on a wafer with an InP layer 7, InGaAsP layer 8 and InP layer 9 successively epitaxial grown on an InP substrate 6 to excite the InGaAsP layer 8 for photoluminescence pattern. Besides, said laser light scans over the wafer with the emission of luminescence light at the position without crystal defects for bright pattern. At the position with crystal defects, luminescence light is not emitted to form dark lines for a pattern as shown in the figure. When YAG laser light is irradiated inside of the dark line, the dark line on the irradiated part is extinguished. |
其他摘要 | 用途:通过在多层结构半导体层上照射波长小于光发射和检测波长的激光,消除在III-V族化合物半导体InP衬底上生长的外延层中产生的晶体缺陷。组成:YAG激光从晶片上的第三InP层9侧照射,其中InP层7,InGaAsP层8和InP层9依次外延生长在InP衬底6上,以激发用于光致发光图案的InGaAsP层8。此外,所述激光在晶片上扫描,在没有晶体缺陷的位置发射发光光以产生亮图案。在具有晶体缺陷的位置处,不发射发光光以形成图案的暗线,如图所示。当YAG激光照射在暗线内部时,照射部分上的暗线熄灭。 |
申请日期 | 1981-05-29 |
专利号 | JP1982197822A |
专利状态 | 失效 |
申请号 | JP1981082052 |
公开(公告)号 | JP1982197822A |
IPC 分类号 | H01L21/208 | H01L21/268 | H01L33/30 | H01S5/00 | H01L21/263 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/85285 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU KK |
推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI,YAMAGUCHI AKIO. Manufacture of semiconductor device. JP1982197822A[P]. 1982-12-04. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1982197822A.PDF(164KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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