Semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser
其他题名	Semiconductor laser
	NARUI, HIRONOBU; YOSHIMATSU, HIROSHI; HIRATA, SHOJI; OZAWA, MASAFUMI; MORI, YOSHIFUMI
	1992-05-05
专利权人	SONY CORPORATION
公开日期	1992-05-05
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser comprises a semiconductor substrate provided in its major surface with a strip mesa, and a laminated structure constructed by sequentially forming, through the epitaxial deposition of semiconductor materials on the major surface of the semiconductor substrate, at least a first semiconductor layer serving as a first conduction type cladding layer, a second semiconductor layer serving as an active layer, a third semiconductor layer serving as a second conduction type cladding layer, and a fourth semiconductor layer serving as a light absorbing or current blocking layer by utilizing the crystallographic principle and the characteristics of the steps formed by the strip mesa so that faults are formed in the laminated structure so as to extend along the direction of extension of the opposite longitudinal side surfaces of the strip mesa. The second semiconductor layer is split by the faults so that a portion of the second semiconductor layer between the faults in a portion of the laminated structure extending on the strip mesa forms a strip active layer. The semiconductor layers are formed sequentially by a continuous metal organic chemical vapor deposition process at a growth rate not higher than about 4 .ANG./sec.
其他摘要	半导体激光器包括在其主表面上设置有条形台面的半导体衬底，以及通过在半导体衬底的主表面上外延沉积半导体材料依次形成至少第一半导体层而构造的层叠结构。第一导电型包层，用作有源层的第二半导体层，用作第二导电型包层的第三半导体层，和利用晶体学原理用作光吸收或电流阻挡层的第四半导体层和由条形台面形成的台阶的特征使得在层叠结构中形成缺陷，以便沿条形台面的相对的纵向侧表面的延伸方向延伸。第二半导体层被缺陷分开，使得在条形台面上延伸的层叠结构的一部分中的缺陷之间的第二半导体层的一部分形成条带有源层。通过连续金属有机化学气相沉积工艺以不高于约4/ sec的生长速率依次形成半导体层。
申请日期	1990-08-14
专利号	US5111469
专利状态	失效
申请号	US07/566824
公开（公告）号	US5111469
IPC 分类号	H01S5/323 \| H01S5/00 \| H01S5/10 \| H01S5/227 \| H01S5/32 \| H01S5/065 \| H01S3/19
专利代理人	-
代理机构	HILL,VAN SANTEN,STEADMAN & SIMPSON
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/85254
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	NARUI, HIRONOBU,YOSHIMATSU, HIROSHI,HIRATA, SHOJI,et al. Semiconductor laser. US5111469[P]. 1992-05-05.

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