Semiconductor laser device and manufacture thereof

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	Semiconductor laser device and manufacture thereof
其他题名	Semiconductor laser device and manufacture thereof
	TAKAHASHI YASUHITO; OGURA MOTOTSUGU; YOKOGAWA TOSHIYA
	1989-12-18
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1989-12-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To allow a semiconductor layer to be easily equipped with an ohmic contact resistance and its contact resistance becomes low in such a manner that it can be disregarded and thus this device makes injection carriers as well as the confinement of light satisfactory by embedding side faces of an active layer with a binary or more compound semiconductor layer and then, providing a binary or more compound semiconductor layer on the above embedded layer through an oxide or nitride thin film layer. CONSTITUTION:A double hetero structure possesses the thin film of a binary or more compound semiconductor layer as an active layer 6 and ternary or more compound semiconductor layers having energy gaps which are larger than that of the active layer as clad layers 5 and 7. Side faces of the above hetero structure are embedded with a binary or more compound semiconductor layer 4 having not only an energy gap which is larger than those of the active layer 6 as well as the clad layers 5 and 7 by more than 0.3eV but also a small refractive index and then, a binary or more compound semiconductor layer 2 is formed on the above embedded layer through an oxide 3 or nitride thin film layer. As a cap layer 2 spreads not only on a mesa part but also over the whole face of the above compound semiconductor layer, this device allows the semiconductor device to be easily equipped with an ohmic contact resistance and its contact resistance becomes low in such a manner that it is disregarded. This approach thus makes injection carriers and the confinement of light satisfactory.
其他摘要	目的：为了使半导体层能够容易地配备欧姆接触电阻，并且其接触电阻变得很低，使得它可以被忽略，因此该装置通过嵌入侧面使得注入载体以及光的限制令人满意然后，通过氧化物或氮化物薄膜层在上述嵌入层上提供二元或更多化合物半导体层，形成具有二元或更多化合物半导体层的有源层。组成：双异质结构具有二元或更多化合物半导体层的薄膜作为有源层6和三元或更多化合物半导体层，其能隙大于作为包层5和7的有源层的能隙。面孔在上述异质结构中嵌入二元以上的化合物半导体层4，其不仅能隙大于有源层6以及包层5和7的能隙大于0.3eV，而且还小然后，通过氧化物3或氮化物薄膜层在上述嵌入层上形成二元以上的化合物半导体层2。由于覆盖层2不仅在台面部分上扩展而且在上述化合物半导体层的整个面上扩展，该器件允许半导体器件容易地配备欧姆接触电阻并且其接触电阻以这样的方式变低它被忽视了。因此，这种方法使注射载体和光的限制满意的。
申请日期	1988-06-10
专利号	JP1989312883A
专利状态	失效
申请号	JP1988144246
公开（公告）号	JP1989312883A
IPC 分类号	H01S5/00 \| H01S5/323 \| H01S5/343 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/85215
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TAKAHASHI YASUHITO,OGURA MOTOTSUGU,YOKOGAWA TOSHIYA. Semiconductor laser device and manufacture thereof. JP1989312883A[P]. 1989-12-18.

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