Multi-wavelength semiconductor laser device

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	Multi-wavelength semiconductor laser device
其他题名	Multi-wavelength semiconductor laser device
	MOON, KI WON; OH, HYE RAN; PARK, JONG IK; KIM, YU SEUNG
	2006-05-04
专利权人	SAMSUNG ELECTRONICS CO., LTD.
公开日期	2006-05-04
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.
其他摘要	一种半导体激光装置，包括：基板，具有分成第一区域和第二区域的顶表面;高输出LD包括第一导电型包层，有源层和第二导电型包层，第二导电型包层包括具有第一脊结构的上部，依次形成在基板的第一区域上;低输出LD，包括第一导电型包层，有源层和第二导电型包层，包括具有第二脊结构的上部，依次形成在基板的第二区域上，其中第一区域第二脊结构以这样的方式形成：它们延伸到彼此相对的两端，第一脊结构在两个或更多个弯曲位置弯曲，第二脊结构是直线的。
申请日期	2005-06-23
专利号	US20060093007A1
专利状态	失效
申请号	US11/159350
公开（公告）号	US20060093007A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84989
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	MOON, KI WON,OH, HYE RAN,PARK, JONG IK,et al. Multi-wavelength semiconductor laser device. US20060093007A1[P]. 2006-05-04.