Xi'an Institute of Optics and Precision Mechanics,CAS
Integrated circuit for light amplification | |
其他题名 | Integrated circuit for light amplification |
OE KUNISHIGE | |
1991-02-26 | |
专利权人 | NIPPON TELEGR & TELEPH CORP |
公开日期 | 1991-02-26 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a light amplification integration circuit capable of preventing the generation of unrequired emission and improving optical sensitivity by using a light amplifier which includes rare earth elements, such as erbium, and amplifying only a signal light equivalent to the level of said rare earth elements. CONSTITUTION:A light amplifier 21 which has a GaInAsP layer 11 containing rare earth elements, such as erbium and a photodetector 23 are integrated with an optical waveguide 22 so that may be under a monolithic structure. Under this structure, inverse bias is applied between a p type electrode 8 and an n type electrode 9 of the photodetector 23 while forward bias is applied between the electrode 8 and electrode 9 of the optical amplifier 21 and incident light 20 is entered under the above state. If the wavelength of the light 20 is the optically amplified wavelength of erbium, the wavelength is amplified with an amplifier 21, and then is received by the detector 23 by way of a waveguide passage 22. Moreover, no light other than the wavelength is generated in terms of the optical output of the amplifier 2 Therefore, the signal light is further amplified and intensified, thereby generating no other light which may become a noise. It is, therefore, possible to improve an S/N ratio to a great extent. |
其他摘要 | 目的:为了获得能够通过使用包括诸如铒的稀土元素的光放大器并且仅放大等于所述稀土的水平的信号光来防止产生不需要的发射并提高光灵敏度的光放大积分电路元素。结构:具有包含稀土元素的GaInAsP层11(例如铒)的光放大器21和光电检测器23与光波导22集成,使得其可以在单片结构下。在该结构下,在光电检测器23的p型电极8和n型电极9之间施加反向偏压,而在光学放大器21的电极8和电极9之间施加正向偏压,并且在上述状态下进入入射光20 。如果光20的波长是铒的光学放大波长,则该波长被放大器21放大,然后通过波导通道22被检测器23接收。此外,没有产生波长以外的光在放大器21的光输出方面。因此,信号光被进一步放大和增强,从而不产生可能变成噪声的其它光。因此,可以在很大程度上改善S / N比。 |
申请日期 | 1989-07-13 |
专利号 | JP1991044988A |
专利状态 | 失效 |
申请号 | JP1989178947 |
公开(公告)号 | JP1991044988A |
IPC 分类号 | H01L27/15 | H01S3/16 | H01S5/00 | H01S5/026 | H01S5/50 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/84895 |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON TELEGR & TELEPH CORP |
推荐引用方式 GB/T 7714 | OE KUNISHIGE. Integrated circuit for light amplification. JP1991044988A[P]. 1991-02-26. |
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