Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	HIRAYAMA YUUZOU; OKUDA HAJIME; UEMATSU YUTAKA
	1984-12-03
专利权人	KOGYO GIJUTSUIN
公开日期	1984-12-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable to grow and form an active layer of good crystallinity without causing the deformation of diffractive grating by a method wherein an optical wave guide layer is grown and formed at a low temperature on a substrate wherein the diffractive grating is formed, and the active layer is grown and formed on said wave guide layer at a high temperature. CONSTITUTION:The diffractive grating 2 of a fixed period is formed on the InP- substrate 1, and next said wave guide layer 3 of GaxIn1-xAsyP1-y is grown and formed at a temperature less than 600 deg.C. Then, the Gax'In1-x'Asy'P1-y'(x'>x, y'>y) active layer 5 is grown and formed on said layer 3 at a temperature more than 600 deg.C in direct manner or via buffer layer 4. For example, an N-InP layer (buffer layer) 4, a Ga0.26In0.74As0.56P0.44 layer (active layer) 5, a P-InP layer (clad layer) 6, and a P-Ga0.16In0.84As0.36P0.54 layer (cap layer) 7 are successively grown on said layer 3 made of N-Ga0.14In0.86As0.31P0.69.
其他摘要	目的：通过一种方法生长和形成具有良好结晶度的有源层而不会引起衍射光栅的变形，其中光波导层在低温下生长并形成在其中形成衍射光栅的基板上，并且在高温下在所述波导层上生长并形成有源层。组成：固定周期的衍射光栅2形成在InP衬底1上，然后GaxIn1-xAsyP1-y的所述波导层3在低于600摄氏度的温度下生长和形成。然后，Gax'In1-x'Asy'P1-y'（x'> x，y'> y）有源层5在超过600℃的温度下以直接方式生长并形成在所述层3上或例如，N-InP层（缓冲层）4，Ga0.26In0.74As0.56P0.44层（有源层）5，P-InP层（包层）6和P -Ga0.16In0.84As0.36P0.54层（盖层）7在由N-Ga0.14In0.86As0.31P0.69制成的所述层3上连续生长。
申请日期	1983-05-18
专利号	JP1984213190A
专利状态	失效
申请号	JP1983085886
公开（公告）号	JP1984213190A
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84246
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	HIRAYAMA YUUZOU,OKUDA HAJIME,UEMATSU YUTAKA. Manufacture of semiconductor laser. JP1984213190A[P]. 1984-12-03.

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