Semiconductor light-emitting device and manufacture thereof

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	Semiconductor light-emitting device and manufacture thereof
其他题名	Semiconductor light-emitting device and manufacture thereof
	YAMAMOTO MOTOYUKI; TSUBURAI YASUHIKO
	1988-07-09
专利权人	TOSHIBA CORP
公开日期	1988-07-09
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent decrease in acceptor concentration at the surface of previously deposited layers and of the uppermost layer and to improve element characteristic, by supplying a p-type dopant into a crystal growth furnace for forming regrowth layers continuously from the point before the growth of the layers to the point after the completion of the growth. CONSTITUTION:A stripe groove 21 having a width of 2mum is formed by etching a clad layer 13 so as to leave a thickness of 0.2mum. The treated substrate is inserted in an MOCVD crystal growth furnace. DEZn and arsine (AsH3) are supplied into the furnace from five minutes before increasing the temperature. Crystal growth is performed under the following conditions, for example: growth temperature=75 deg.C, normal pressure, V/III ratio (molar ratio of V compound to III compound)=20, growing rate (GaAs)=0.2mum/min, and total flow of hydrogen=10l/min. DEZn is initially supplied at a molar ratio of 3X10/III compound for example so as to clean an oxide film on the top. Then, DEZn is supplied at a flow rate of 5X10/III compound so that an optical waveguide layer 15 and a clad layer 16 are deposited. Supply of DEZn is continued at 5X10/III compound still after deposition of a contact layer 17 until it is stopped when room temperature is achieved.
其他摘要	用途：为了防止先前沉积的层和最上层表面的受主浓度降低，并改善元件特性，通过将p型掺杂剂提供到晶体生长炉中，从生长前的点开始连续形成再生长层。生长完成后的层数到点。组成：通过蚀刻包层13形成宽度为2μm的条纹凹槽21，以留下0.2μm的厚度。将处理过的基材插入MOCVD晶体生长炉中。在升高温度前5分钟将DEZn和胂（AsH3）供入炉中。晶体生长在以下条件下进行，例如：生长温度= 75℃，常压，V / III比（V化合物与III化合物的摩尔比）= 20，生长速率（GaAs）= 0.2mum / min ，总氢气流量= 10升/分钟。 DEZn最初以3×10 -2 / III化合物的摩尔比供应，例如以清洁顶部的氧化膜。然后，以5×10 -2 / III化合物的流速供应DEZn，从而沉积光波导层15和包层16。在沉积接触层17之后，仍然以5×10 -1 / III化合物继续供应DEZn，直到在达到室温时停止。
申请日期	1986-12-26
专利号	JP1988166285A
专利状态	失效
申请号	JP1986315346
公开（公告）号	JP1988166285A
IPC 分类号	H01L21/20 \| H01L21/205 \| H01L33/14 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01S5/042 \| H01S5/223 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84219
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	YAMAMOTO MOTOYUKI,TSUBURAI YASUHIKO. Semiconductor light-emitting device and manufacture thereof. JP1988166285A[P]. 1988-07-09.

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