Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	TSUKIKI KAZUNORI
	1989-08-29
专利权人	SONY CORP
公开日期	1989-08-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To keep leak current from flowing into a bonding adhesive layer even if a laser diode is bonded on a heat sink or other equipment, by forming insulation areas in the depth to reach at least a clad layer on a semiconductor substrate side through a clad layer and an active layer, on both sides of a laser diode near the active layer. CONSTITUTION:On both sides 11 of a laser diode, insulation regions 16 are formed in the depth to reach the surface of a semiconductor substrate 1 from a second clad layer 4 through an active layer 3 and a first clad layer 2. The insulation areas 16 are formed by conducting selective ion implantation of boron, hydrogen or other material after formation of the clad layer 4 or the adhesive layer 5 in the manufacturing process of the laser diode. Even if the laser diode manufactured by such a method is bonded on a heat sink by solder 15 at a surface 12 near the active layer 3, leak current is not generated by the solder 15 when the solder 15 climbs up since there are the insulation regions 16 on both sides 11 of the laser diodes. Therefore, an operation failure of the semiconductor laser caused by generation of leak current can be avoided and an yield can also be increased.
其他摘要	用途：即使激光二极管粘接在散热器或其他设备上，也要防止漏电流流入粘接层，方法是在深度上形成绝缘区域，通过包层至少到达半导体衬底侧的包层在有源层附近的激光二极管的两侧上的层和有源层。组成：在激光二极管的两侧11，绝缘区域16形成在深度，从第二覆层4通过有源层3和第一覆层2到达半导体衬底1的表面。绝缘区域16通过在激光二极管的制造过程中形成包层4或粘合层5之后进行硼，氢或其他材料的选择性离子注入来形成。即使通过这种方法制造的激光二极管通过焊料15在有源层3附近的表面12处接合在散热器上，当焊料15爬上时焊料15也不会产生漏电流，因为存在绝缘区域激光二极管11的两侧各有16个。因此，可以避免由泄漏电流的产生引起的半导体激光器的操作故障，并且还可以提高产量。
申请日期	1988-02-24
专利号	JP1989215088A
专利状态	失效
申请号	JP1988041232
公开（公告）号	JP1989215088A
IPC 分类号	H01S5/00 \| H01S5/02 \| H01S5/022 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84218
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	TSUKIKI KAZUNORI. Semiconductor laser. JP1989215088A[P]. 1989-08-29.

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