Group III nitride compound semiconductor laser

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	Group III nitride compound semiconductor laser
其他题名	Group III nitride compound semiconductor laser
	KOIKE, MASAYOSHI; YAMASAKI, SHIRO; TEZEN, YUTA; NAGAI, SEIJI; KOJIMA, AKIRA; HIRAMATSU, TOSHIO
	2004-01-20
专利权人	JAPAN SCIENCE AND TECHNOLOGY AGENCY
公开日期	2004-01-20
授权国家	美国
专利类型	授权发明
摘要	A semiconductor laser 101 comprises a sapphire substrate 1, an AlN buffer layer 2, Si-doped GaN n-layer 3, Si-doped Al0.1Ga0.9N n-cladding layer 4, Si-doped GaN n-guide layer 5, an active layer 6 having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer 7, Mg-doped Al0.1Ga0.9N p-cladding layer 8, and Mg-doped GaN p-contact layer 9 are formed successively thereon. A ridged hole injection part B which contacts to a ridged resonator part A is formed to have the same width as the width w of an Ni electrode 10. Holes transmitted from the Ni electrode 10 are injected to the active layer 6 with high current density, and electric current threshold for laser oscillation can be decreased. Electric current threshold can be improved more effectively by forming also the p-guide layer 7 to have the same width as the width w of the Ni electrode 10.
其他摘要	半导体激光器101包括蓝宝石衬底1，AlN缓冲层2，Si掺杂的GaN n层3，Si掺杂的Al0.1Ga0.9N n包层4，Si掺杂的GaN n引导层5，具有多量子阱（MQW）结构的有源层6，其中GaN阻挡层62的厚度约为35埃，Ga0.95In0.05N阱层61的厚度约为35埃，交替层叠Mg掺杂的GaN p导向层如图7所示，在其上依次形成掺杂Mg的Al0.1Ga0.9N p包覆层8和掺杂Mg的GaN p接触层9。与脊状谐振器部分A接触的脊状空穴注入部分B形成为具有与Ni电极10的宽度w相同的宽度。从Ni电极10传输的空穴以高电流密度注入有源层6，并且可以降低激光振荡的电流阈值。通过将p导向层7形成为具有与Ni电极10的宽度w相同的宽度，可以更有效地改善电流阈值。
申请日期	2000-02-29
专利号	US6680957
专利状态	失效
申请号	US09/515493
公开（公告）号	US6680957
IPC 分类号	H01S5/343 \| H01S5/00 \| H01S5/22 \| H01S5/323
专利代理人	-
代理机构	MCGINN & GIBB,PLLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84137
专题	半导体激光器专利数据库
作者单位	JAPAN SCIENCE AND TECHNOLOGY AGENCY
推荐引用方式 GB/T 7714	KOIKE, MASAYOSHI,YAMASAKI, SHIRO,TEZEN, YUTA,et al. Group III nitride compound semiconductor laser. US6680957[P]. 2004-01-20.

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