Semiconductor device and manufacture thereof

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	Semiconductor device and manufacture thereof
其他题名	Semiconductor device and manufacture thereof
	WAKAO KIYOHIDE; KOBAYASHI HIROHIKO
	1990-01-17
专利权人	FUJITSU LTD
公开日期	1990-01-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To increase the contact area of an electrode with a cap layer, and to reduce a contact resistance by forming the layer for an electrode contact in a crest state (in a triangular sectional state). CONSTITUTION:(In+Ga+P+As) growing solution 13 surrounded by a carbon material 12 is set to approx. 585 deg.C of saturated temperature, moved on a base 11 in a direction of an arrow, and liquid grown on the surface of a wafer 14. In this case, the surface of the wafer is set to 580 deg.C. Thus, the solution 13 is gradually grown as a single crystalline layer of an InGaPAs layer 21 in contact with the surface of the wafer 14, but since the solution 13 of 585 deg.C is in a large oversaturation state, it is abnormally grown in a crest state (in a triangular state). Thereafter, when this P type InGaPAs layer 21 (cap layer) is coated at both side faces with P-type electrode layers, the contact area of the cap layer with the electrode layers is increased, thereby reducing the contact resistance that much.
其他摘要	目的：增加电极与盖层的接触面积，并通过在峰值状态（三角形截面状态）形成电极接触层来降低接触电阻。组成：（在+ Ga + P + As中）由碳材料12包围的生长溶液13设定为约。饱和温度为585℃，沿箭头方向在基座11上移动，液体在晶片14的表面上生长。在这种情况下，晶片表面设定为580℃。因此，溶液13逐渐生长为与晶片14的表面接触的InGaPAs层21的单晶层，但由于585℃的溶液13处于大的过饱和状态，因此它在异常生长波峰状态（呈三角状态）。此后，当该P +型InGaPAs层21（盖层）在两个侧面涂覆有P型电极层时，盖层与电极层的接触面积增加，从而降低了接触电阻。
申请日期	1988-06-30
专利号	JP1990012985A
专利状态	失效
申请号	JP1988164445
公开（公告）号	JP1990012985A
IPC 分类号	H01L33/30 \| H01L33/40 \| H01S5/00 \| H01S5/042 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84132
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	WAKAO KIYOHIDE,KOBAYASHI HIROHIKO. Semiconductor device and manufacture thereof. JP1990012985A[P]. 1990-01-17.

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