Semiconductor laser device and manufacture thereof

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	Semiconductor laser device and manufacture thereof
其他题名	Semiconductor laser device and manufacture thereof
	MOROFUJI TAKESHI; TAKEUCHI HIDEO
	1990-03-26
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1990-03-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device, which has lowered reflectivity of the return beams of the end face of a laser chip and return beam noise of which are reduced, by roughening a beam-recovering region of a chip surface from which laser beams are extracted. CONSTITUTION:A beam-recovering region of a chip surface 21 from which laser beams are extracted is roughened. A compound semiconductor substrate 11, on a surface of which a growth layer 20 for laser beam emission is formed, is cloven, a protective film 22 is shaped onto both cloven surfaces 21 through one-time evaporation, said protective films 22 in regions, into which the return beams of the cleavage planes 21 from which laser beams are extracted are returned, are removed, and surfaces from which the protective films 22 are gotten rid are roughened. Al2O3 films are shaped on both sides of the cleavage planes 21 of a GaAlAs semiconductor laser as the protective films 22 of end faces, the growth layer 20 sides of cleavage planes are coated with resist films 23, and all Al2O3 films 22 exposed are etched by using an HF group etchant. The P-GaAs substrate 11 is dipped into the etchant of a KOH group, etc., and the surface is roughened.
其他摘要	目的：通过粗化激光束的芯片表面的光束恢复区域，获得激光器芯片端面返回光束的反射率降低，返回光束噪声降低的半导体激光器件。提取。组成：提取激光束的芯片表面21的光束恢复区域被粗糙化。在其表面上形成用于激光束发射的生长层20的化合物半导体衬底11是偶合的，保护膜22通过一次蒸发成形在两个表面21上，所述保护膜22在区域中成形为返回提取激光束的解理面21的返回光束，并且使得保护膜22所从的表面变粗糙。在GaAlAs半导体激光器的解理面21的两侧上形成Al2O3膜作为端面的保护膜22，解理面的生长层20侧涂覆有抗蚀剂膜23，并且暴露的所有Al2O3膜22被蚀刻。使用HF组蚀刻剂。将P-GaAs衬底11浸入KOH基团等的蚀刻剂中，并使表面粗糙化。
申请日期	1988-09-21
专利号	JP1990084786A
专利状态	失效
申请号	JP1988236908
公开（公告）号	JP1990084786A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83929
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	MOROFUJI TAKESHI,TAKEUCHI HIDEO. Semiconductor laser device and manufacture thereof. JP1990084786A[P]. 1990-03-26.

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