Semiconductor laser and manufacture thereof

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	Semiconductor laser and manufacture thereof
其他题名	Semiconductor laser and manufacture thereof
	HORIKOSHI YOSHIHARU; OKAMOTO HIROSHI
	1985-06-06
专利权人	NIPPON DENSHIN DENWA KOSHA
公开日期	1985-06-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a multiple quantum well laser having a high output and long life by forming a uniform mixed crystal region to a multiple quantum well structure section and forming a cleavage plane constituting a resonator mirror to the mixed crystal region. CONSTITUTION:An n type Ga1-xAs layer 2 is formed on an n type GaAs substrate crystal 1, and a superlattice layer 3 consisting of N+1 GaAs quantum well layers and N AlyGa1-yAs barrier layers, a p type AlxGa1-xAs layer 4 and a p type GaAs layer 5 are shaped on the layer 2 in succession. A nitride film 6 or an oxide film is patterned to form striped windows 7, and Zn is diffused. Consequently, the superlattice layers in Zn diffusion regions 8 are broken, and uniform mixed crystals 9 are obtained. The crystal is cloven in the vicinity 11 of the center along the stripes 7, and resonator mirrors are formed by the cleavage planes 12. An active region is not exposed in the cleavage planes 12 in a semiconductor laser manufactured in this manner and the laser is protected by the uniform mixed crystals shaped by Zn diffusion, thus obtaining a stable high output.
其他摘要	目的：通过在多量子阱结构部分形成均匀的混晶区并形成构成谐振镜的解理面到混合晶体区，获得具有高输出和长寿命的多量子阱激光器。组成：n型GaAs-xAs层2形成在n型GaAs衬底晶体1上，超晶格层3由N + 1 GaAs量子阱层和N AlyGa1-yAs阻挡层组成，p型AlxGa1-xAs层4并且在层2上依次成形p型GaAs层5。图案化氮化物膜6或氧化物膜以形成条纹窗口7，并且Zn被扩散。因此，Zn扩散区8中的超晶格层被破坏，并且获得均匀的混晶9。晶体沿着条纹7在中心附近11处形成，并且谐振器镜由解理面12形成。在以这种方式制造的半导体激光器中，有源区不暴露在解理面12中，并且激光器是由Zn扩散形成的均匀混晶保护，从而获得稳定的高输出。
申请日期	1983-11-08
专利号	JP1985101989A
专利状态	失效
申请号	JP1983210362
公开（公告）号	JP1985101989A
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S5/16 \| H01S5/343 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83672
专题	半导体激光器专利数据库
作者单位	NIPPON DENSHIN DENWA KOSHA
推荐引用方式 GB/T 7714	HORIKOSHI YOSHIHARU,OKAMOTO HIROSHI. Semiconductor laser and manufacture thereof. JP1985101989A[P]. 1985-06-06.

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