Semiconductor laser element

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser element
其他题名	Semiconductor laser element
	FUKUNAGA, TOSHIAKI; MATSUMOTO, KENJI; WADA, MITSUGU
	2001-10-11
专利权人	NICHIA CORPORATION
公开日期	2001-10-11
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser element capable of reducing an element resistance and producing a beam of high quality includes: an n-Ga1-Z4AlZ4N composition gradient layer provided between an n-GaN contact layer and an n-Ga1-Z1AlZ1N/GaN superlattice clad layer; an n-Ga1-Z5AlZ5N composition gradient layer provided between the n-Ga1-Z1AlZ1N/GaN superlattice clad layer and an nor i-Ga1-Z2AlZ2N optical waveguide layer; a p-Ga1-Z5AlZ5N composition gradient layer provided between a p- or i-Ga1-Z2AlZ2N optical waveguide layer and a p-Ga1-Z1AlZ1N superlattice gradient layer; and a p-Ga1-Z4AlZ4N composition gradient layer provided between a p-Ga1-Z1AlZ1N/GaN superlattice upper clad layer and a p-GaN contact layer. Z4 of the n-Ga1-Z4AlZ4N composition gradient layer is continuously changed from 0 to a composition corresponding to the band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer. Z5 in the Ga1-Z5AlZ5N composition gradient layer is continuously changed from z2 to a composition corresponding to the band gap of the Ga1-Z1AlZ1N/GaN superlattice clad layer.
其他摘要	一种能够降低元件电阻并产生高质量光束的半导体激光元件包括：n-Ga1-Z4AlZ4N组分梯度层，设置在n-GaN接触层和n-Ga1-Z1AlZ1N / GaN超晶格包层之间; n-Ga1-Z5AlZ5N组分梯度层，设置在n-Ga1-Z1AlZ1N / GaN超晶格包覆层和非i-Ga1-Z2AlZ2N光波导层之间; p- Ga1-Z5AlZ5N组分梯度层，设置在p-或i-Ga1-Z2AlZ2N光波导层和p-Ga1-Z1AlZ1N超晶格梯度层之间;在p-Ga1-Z1AlZ1N / GaN超晶格上包层和p-GaN接触层之间提供p-Ga1-Z4AlZ4N组分梯度层。 n-Ga1-Z4AlZ4N组分梯度层的Z4从0连续变化到对应于Ga1-Z1AlZ1N / GaN超晶格包层的带隙的组成。 Ga1-Z5AlZ5N组分梯度层中的Z5从z2连续变化到对应于Ga1-Z1AlZ1N / GaN超晶格包层的带隙的组成。
申请日期	2001-04-10
专利号	US20010028668A1
专利状态	授权
申请号	US09/828888
公开（公告）号	US20010028668A1
IPC 分类号	H01S5/042 \| H01S5/20 \| H01S5/32 \| H01S5/323 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83552
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	FUKUNAGA, TOSHIAKI,MATSUMOTO, KENJI,WADA, MITSUGU. Semiconductor laser element. US20010028668A1[P]. 2001-10-11.