Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	SATO SHIRO
	1988-08-04
专利权人	RICOH CO LTD
公开日期	1988-08-04
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To confine effectively emitted lights and obtain a semiconductor light emitting element as well as a semiconductor laser which have an improved light emitting power level by preparing a protruding part that rises vertically on a substrate, thereby forming electrodes on the side plane of the protruding part and on a plane that is extending in parallel with the substrate from a lower part of the protruding part. CONSTITUTION:Almost a cylindrical protruding part 121 is formed in the vertical direction to a substrate at an upper clad layer 104 consisting of the second conductivity type semiconductor layer and an upper reflecting mirror 111 that plays arole of the reflecting mirror to a light moving up and down inside an element is formed at the top of the protruding part. An electrically insulating layer 110 is laminated at a plane that is substantially in parallel with the substrate 101 from a lower part of the protruding part 121 and a P-side electrode 106 is formed at an upper part of the electrically insulating layer 110 as well as at the side pane of the protruding part 121 and then an N-side electrode 107 is formed at the rear of the substrate 10 When this device causes an electric current to flow between the above two electrodes, a light emitting at an emitting layer is confined in the horizontal direction to the substrate and it improves the emitting efficiency. In this way, a light power generated at a light emitting region is taken out as an improved light emitting power in the vertical direction to the substrate.
其他摘要	用途：通过准备在基板上垂直上升的突出部分，有效地限制发射的光并获得具有改善的发光功率水平的半导体发光元件以及半导体激光器，从而在突出的侧平面上形成电极部分和在从突出部分的下部平行于基板延伸的平面上。组成：在由第二导电型半导体层和上反射镜111组成的上包层104的垂直方向上形成几乎圆柱形的突出部分121，该上反射镜111将反射镜的光环照射到向上移动的光上。在一个元素内部形成的顶部突出部分。电绝缘层110层叠在从突出部分121的下部基本上与基板101平行的平面处，并且P侧电极106形成在电绝缘层110的上部以及P侧电极106上。在突出部分121的侧窗格上，然后在基板101的后部形成N侧电极107.当该装置使电流在上述两个电极之间流动时，在发光层发光的是沿水平方向限制在基板上，提高了发光效率。以这种方式，在发光区域处产生的光功率被取出作为在垂直方向上的改善的发光功率基质。
申请日期	1987-01-31
专利号	JP1988188983A
专利状态	失效
申请号	JP1987019666
公开（公告）号	JP1988188983A
IPC 分类号	H01L33/06 \| H01L33/08 \| H01L33/10 \| H01L33/14 \| H01L33/20 \| H01L33/28 \| H01L33/32 \| H01L33/38 \| H01L33/40 \| H01S5/00 \| H01S5/042 \| H01S5/183 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83549
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	SATO SHIRO. Semiconductor light emitting device. JP1988188983A[P]. 1988-08-04.

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