Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	USHIJIMA ICHIRO; GOTO HIROSHI
	1988-04-08
专利权人	FUJITSU LTD
公开日期	1988-04-08
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To inhibit crystallizability from deteriorating and to improve the characteristics of a semiconductor laser by a method wherein a guide layer is formed after solution of the same solid phase composition as that of the guide layer and of a small supersaturation is passed through on the surface of the diffraction grating of the InP substrate of the distributed-feedback type semiconductor laser. CONSTITUTION:In a continuous liquid phase epitaxial growing device, an N-type InGaAsP guide layer 3, an undoped InGaAsP active layer 4 and a P-type InP layer 5a are formed in order on an InP substrate At this time, an InGaAsP solution of the same solid phase composition as that of the guide layer 3 is brought into contact with and made to pass on the InP substrate 1, that is, the rough surface 2 of the diffraction grating of the substrate, at a subcooling degree of 3 deg.C before the InGaAsP guide layer is formed. At this time, if the InP substrate 1 is held at a growth starting temperature of 600 deg.C, the meltback of the InP substrate is not generated by the passing of this InGaAsP solution and there is not the precipitation of an InGaAsP crystal as well. Thereby, the factors of bad effect in the rough surface of the diffraction grating can be considerably eliminated, the crystal of such a semiconductor laser as an InGaAsP layer which is formed on the InP substrate is improved and the characteristics of a semiconductor laser are improved.
其他摘要	用途：通过一种方法抑制可结晶性的恶化并改善半导体激光器的特性，其中在与引导层相同的固相组成和小过饱和度的溶液在表面上通过后形成引导层分布反馈型半导体激光器的InP衬底的衍射光栅。组成：在连续液相外延生长装置中，在InP衬底1上依次形成N型InGaAsP引导层3，未掺杂的InGaAsP有源层4和P型InP层5a。此时，InGaAsP使与导向层3相同的固相组成的溶液与InP基板1接触并使其通过，即基板的衍射光栅的粗糙表面2，过冷度为3在形成InGaAsP引导层之前的℃。此时，如果将InP衬底1保持在600℃的生长起始温度，则InGa衬底的通过不会产生InP衬底的回熔，并且也没有InGaAsP晶体的沉淀。。因此，可以显着消除衍射光栅粗糙表面中的不良影响因素，改善在InP衬底上形成的诸如InGaAsP层的半导体激光器的晶体，并改善半导体激光器的特性。
申请日期	1986-09-20
专利号	JP1988078588A
专利状态	失效
申请号	JP1986220920
公开（公告）号	JP1988078588A
IPC 分类号	H01S5/00 \| H01L21/208 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83336
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	USHIJIMA ICHIRO,GOTO HIROSHI. Manufacture of semiconductor laser. JP1988078588A[P]. 1988-04-08.

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