Semiconductor laser and method of manufacturing the same

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	Semiconductor laser and method of manufacturing the same
其他题名	Semiconductor laser and method of manufacturing the same
	YAMAMOTO, TSUYOSHI; SHOJI, HAJIME; WATANABE, TAKAYUKI; FUJII, TAKUYA; KOBAYASHI, HIROHIKO
	2003-01-16
专利权人	FUJITSU LIMITED
公开日期	2003-01-16
授权国家	美国
专利类型	发明申请
摘要	There is provided a semiconductor laser which comprises a first cladding layer formed of compound semiconductor having first conductivity type impurity and having a mesa-shaped projection, an active layer formed on the projection like a stripe and having side surfaces which are inclined at an angle of more than 70 degrees but less than 90 degrees relative to an upper surface of the first cladding layer, buried layers formed on both sides of the projection and having second conductivity type impurity, current blocking layers each having one end which contacts a virtual surface obtained by extending upward a side surface of the active layer and having a first facet which extends downward from the one end and is inclined by about 55 degrees relative to the upper surface of the first cladding layer and formed on each buried layer and having the first conductivity type impurity, and second cladding layers formed on the current blocking layers and the active layer and having the second conductivity type impurity.
其他摘要	本发明提供一种半导体激光器，其包括由具有第一导电类型杂质并具有台面形突起的化合物半导体形成的第一包层，在所述突起上形成有条纹状的有源层，并具有以一定角度倾斜的侧面。相对于第一包层的上表面超过70度但小于90度，在突起的两侧形成的掩埋层具有第二导电类型的杂质，每个电流阻挡层的一端与通过所获得的虚拟表面接触向上延伸有源层的侧表面并具有第一小平面，该第一小平面从一端向下延伸并相对于第一覆层的上表面倾斜约55度并形成在每个掩埋层上并具有第一导电类型杂质和形成在电流阻挡层和有源层上并具有第二导管的第二包层活性杂质。
申请日期	1999-12-03
专利号	US20030012240A1
专利状态	授权
申请号	US09/453546
公开（公告）号	US20030012240A1
IPC 分类号	H01S5/00 \| H01S5/22 \| H01S5/227 \| H01S5/343
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83243
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	YAMAMOTO, TSUYOSHI,SHOJI, HAJIME,WATANABE, TAKAYUKI,et al. Semiconductor laser and method of manufacturing the same. US20030012240A1[P]. 2003-01-16.